Publikation: Further investigations on the avoidance of boron-oxygen related degradation by means of regeneration
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2007
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The compiled state-of-the-art of PV solar technology and deployment : 22 nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 893-896
Zusammenfassung
Boron and oxygen contamination in Czochralski (Cz) grown silicon leads in the short term to a degradation of the charge carrier lifetime due to the formation of recombination active complexes. For longer times these harmful complexes may be neutralized by a regeneration called reaction. Supported by elevated temperatures, a conversion of the recombination active species into an inactive species is induced by the presence of charge carriers injected by light or bias voltages. In this contribution, the influence of light intensity and bias voltages is discussed.
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530 Physik
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EU PVSEC, 3. Sept. 2007 - 7. Sept. 2007, Milan, Italy
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HERGUTH, Axel, Gunnar SCHUBERT, Martin KÄS, Giso HAHN, 2007. Further investigations on the avoidance of boron-oxygen related degradation by means of regeneration. EU PVSEC. Milan, Italy, 3. Sept. 2007 - 7. Sept. 2007. In: The compiled state-of-the-art of PV solar technology and deployment : 22 nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 893-896BibTex
@inproceedings{Herguth2007Furth-917,
year={2007},
title={Further investigations on the avoidance of boron-oxygen related degradation by means of regeneration},
publisher={WIP-Renewable Energies},
address={München},
booktitle={The compiled state-of-the-art of PV solar technology and deployment : 22 nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007},
pages={893--896},
author={Herguth, Axel and Schubert, Gunnar and Käs, Martin and Hahn, Giso}
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<dcterms:abstract xml:lang="eng">Boron and oxygen contamination in Czochralski (Cz) grown silicon leads in the short term to a degradation of the charge carrier lifetime due to the formation of recombination active complexes. For longer times these harmful complexes may be neutralized by a regeneration called reaction. Supported by elevated temperatures, a conversion of the recombination active species into an inactive species is induced by the presence of charge carriers injected by light or bias voltages. In this contribution, the influence of light intensity and bias voltages is discussed.</dcterms:abstract>
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