@inproceedings{Wilking2016apple-36371,
  year={2016},
  doi={10.4229/EUPVSEC20162016-2DO.2.1},
  title={Of apples and oranges : why comparing BO regeneration rates requires injection level correction},
  isbn={3-936338-41-8},
  publisher={WIP},
  address={München},
  booktitle={Proceedings of 32nd EU PVSEC},
  pages={487--494},
  author={Wilking, Svenja and Ebert, Sebastian and Beckh, Cornelius and Herguth, Axel and Hahn, Giso}
}

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    <dc:creator>Ebert, Sebastian</dc:creator>
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    <dcterms:abstract xml:lang="eng">Different injection levels make the comparison of BO Regeneration kinetics in different Si wafers or solar cells difficult, e.g., when samples made of different materials featuring different background lifetime levels are to be compared. A correction factor is presented that is able to compensate for these differences in injection level during Regeneration. This is used to investigate the influence of metallic impurities, interstitial oxygen and different dopants on BO Regeneration kinetics. It is found that a POCl3 gettering step only affects Regeneration if the overall H concentration within the wafer is low. Interstitial oxygen is found to be less detrimental to Regeneration than assumed previously. The influence of different dopants is shown in a process leading to a stable regenerated lifetime, and the measured Regeneration rates can be compared because of the applied injection correction. A numerical fit optimization method is presented to separate the influence of the different dopants. It is shown that net doping concentration p0 is not relevant for BO Regeneration whereas B as well as Ga slow down the Regeneration process. An explanation within the H-model of BO Regeneration is given.</dcterms:abstract>
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    <dc:contributor>Beckh, Cornelius</dc:contributor>
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    <dc:contributor>Herguth, Axel</dc:contributor>
    <dc:creator>Beckh, Cornelius</dc:creator>
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