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PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts

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2024

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DUBOIS, Sébastien, Hrsg.. SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France. Hannover: TIB Open Publishing, 2024. SiliconPV proceedings. 2. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1291

Zusammenfassung

We investigate the barrier properties of phosphorus-doped Si-rich silicon carbide (SixCy) thin films deposited by PECVD against Al/Si alloying in the context of poly-Si/SiOx passivating contacts. The stability of the implied open circuit voltage (iVOC) after firing of single-sided, full area screen-printed Al-contacts increases with carbon content of the barrier layer and depends on the crystallization scheme applied to the samples. Crystallized SixCy layers with an atomic C concentration of about 20 at.% deposited on pre-crystallized poly-Si predominantly show no significant decrease in iVOC values for peak firing temperatures up to 725°C.

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530 Physik

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Passivating Contacts, Metallization, Aluminum, Silicon Carbide

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SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics, 15. Apr. 2024 - 19. Apr. 2024, Chambéry, France
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ISO 690BÄURLE, David, Benjamin GAPP, Giso HAHN, Heiko PLAGWITZ, Barbara TERHEIDEN, 2024. PECVD SixCy as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiOx Passivating Contacts. SiliconPV 2024, 14th International Conference on Crystalline Silicon Photovoltaics. Chambéry, France, 15. Apr. 2024 - 19. Apr. 2024. In: DUBOIS, Sébastien, Hrsg.. SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France. Hannover: TIB Open Publishing, 2024. SiliconPV proceedings. 2. eISSN 2940-2123. Verfügbar unter: doi: 10.52825/siliconpv.v2i.1291
BibTex
@inproceedings{Baurle2024-12-06PECVD-72185,
  title={PECVD Si<sub>x</sub>C<sub>y</sub> as Barrier Layer Against Aluminum in Solar Cells With poly-Si/SiO<sub>x</sub> Passivating Contacts},
  year={2024},
  doi={10.52825/siliconpv.v2i.1291},
  number={2},
  address={Hannover},
  publisher={TIB Open Publishing},
  series={SiliconPV proceedings},
  booktitle={SiliconPV 2024, the 14th International Conference on Crystalline Silicon Photovoltaics : April 15 - April 19 2024, Chambéry, France},
  editor={Dubois, Sébastien},
  author={Bäurle, David and Gapp, Benjamin and Hahn, Giso and Plagwitz, Heiko and Terheiden, Barbara}
}
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