Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature

Abstract

Even though n-type Si wafers show a lower extent of light-induced degradation, similar degradation and regeneration behavior as in p-type Si materials has been observed for various n-type Si monocrystalline materials. In this work, the long-term behavior of minority charge carrier lifetime in non-diffused n-type FZ-Si and Cz-Si wafers during illumination at elevated temperatures is investigated. Thereby, various influencing factors such as peak firing temperature and treatment temperature are considered. Degradation and a very strong regeneration effect, which exceeds the initial effective lifetime value, can be observed in the samples. Since surface-related saturation current density remains almost constant during degradation and regeneration, the effect seems to be bulk related. The extent of degradation and regeneration could be shown to be firing temperature-dependent. It could also be shown for n-type FZ-Si wafers that higher firing temperatures result in an increased H2 content within the silicon bulk. Investigations of the injection-dependent defect density revealed that the defect formed during degradation is not a deep level Shockley-Read-Hall defect. Observations at different treatment temperatures and constant illumination of 0.9(1) sun photon flux equivalent have shown that a higher treatment temperature leads to faster degradation and regeneration kinetics. Similarly, higher injection rates also speed up regeneration kinetics. Since degradation also occurs in darkness, the bulk related degradation effect in n-type FZ-Si is charge carrier-induced and not necessarily light-induced.