Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts

Lade...
Vorschaubild
Dateien
Zu diesem Dokument gibt es keine Dateien.
Datum
2022
Autor:innen
Chaudhary, Aditya
Hoss, Jan
Lossen, Jan
Kopecek, Radovan
van Swaaij, René
Zeman, Miro
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Zusammenfassung

Passivated contact based on a thin interfacial oxide and a highly doped poly-silicon layer has emerged as the next evolutionary step to increase the efficienciesof industrial silicon solar cells. To take maximum advantage from this layer stack,it is vital to limit the losses at the metal polysilicon interface, which can bequantified as metal polysilicon recombination current density (J0met) and contactresistivity. In cell concepts, wherein a large variety of silicon substrate surfacefinish can be obtained, it is essential to know how the surfacefinish affects the J0met and contact resistivity. Herein, commercially availablefire through silverpaste and the metal-polysilicon recombination current densities and contactresistivity are used for three different silicon substrate surfacefinishes, namely:planar or saw damage etched (SDE), chemically polished in acidic solution andalkaline pyramidal textured. Contact resistivity values below 3 mΩcm2withJ0met in order of the recombination current density of the doped region (J0pass) areobtained for samples with planar surface for both 150 and 200 nm nþpolysiliconlayer thicknesses. The results presented in this work show that the samples withflat substrate morphology outperform the samples with textured surfaces.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
cross-sectional scanning electron microscope, metallization, passivated contacts, polysilicon, screen printing, silicon substrate surface morphology
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690CHAUDHARY, Aditya, Jan HOSS, Jan LOSSEN, Frank HUSTER, Radovan KOPECEK, René VAN SWAAIJ, Miro ZEMAN, 2022. Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley-Blackwell - STM. 2022, 219, 2100869. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.20210086
BibTex
@article{Chaudhary2022Influ-57535,
  year={2022},
  doi={10.1002/pssa.20210086},
  title={Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts},
  volume={219},
  issn={1862-6300},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Chaudhary, Aditya and Hoss, Jan and Lossen, Jan and Huster, Frank and Kopecek, Radovan and van Swaaij, René and Zeman, Miro},
  note={Article Number: 2100869}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/57535">
    <dc:creator>Huster, Frank</dc:creator>
    <dcterms:issued>2022</dcterms:issued>
    <dc:creator>Kopecek, Radovan</dc:creator>
    <dc:contributor>Hoss, Jan</dc:contributor>
    <dc:contributor>Lossen, Jan</dc:contributor>
    <dcterms:abstract xml:lang="eng">Passivated contact based on a thin interfacial oxide and a highly doped poly-silicon layer has emerged as the next evolutionary step to increase the efficienciesof industrial silicon solar cells. To take maximum advantage from this layer stack,it is vital to limit the losses at the metal polysilicon interface, which can bequantified as metal polysilicon recombination current density (J&lt;sub&gt;0met&lt;/sub&gt;) and contactresistivity. In cell concepts, wherein a large variety of silicon substrate surfacefinish can be obtained, it is essential to know how the surfacefinish affects the J&lt;sub&gt;0met&lt;/sub&gt; and contact resistivity. Herein, commercially availablefire through silverpaste and the metal-polysilicon recombination current densities and contactresistivity are used for three different silicon substrate surfacefinishes, namely:planar or saw damage etched (SDE), chemically polished in acidic solution andalkaline pyramidal textured. Contact resistivity values below 3 mΩcm2withJ&lt;sub&gt;0met&lt;/sub&gt; in order of the recombination current density of the doped region (J&lt;sub&gt;0pass&lt;/sub&gt;) areobtained for samples with planar surface for both 150 and 200 nm nþpolysiliconlayer thicknesses. The results presented in this work show that the samples withflat substrate morphology outperform the samples with textured surfaces.</dcterms:abstract>
    <dc:contributor>Chaudhary, Aditya</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-05-16T08:28:05Z</dc:date>
    <dc:creator>Zeman, Miro</dc:creator>
    <dc:language>eng</dc:language>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>van Swaaij, René</dc:contributor>
    <dcterms:title>Influence of Silicon Substrate Surface Finish on the Screen-Printed Silver Metallization of Polysilicon-Based Passivating Contacts</dcterms:title>
    <dc:contributor>Kopecek, Radovan</dc:contributor>
    <dc:creator>van Swaaij, René</dc:creator>
    <dc:contributor>Huster, Frank</dc:contributor>
    <dc:creator>Lossen, Jan</dc:creator>
    <dc:creator>Chaudhary, Aditya</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/57535"/>
    <dc:creator>Hoss, Jan</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Zeman, Miro</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-05-16T08:28:05Z</dcterms:available>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Ja
Diese Publikation teilen