Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si

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7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany / Preu, Ralf (Hrsg.). - Amsterdam : Elsevier, 2017. - (Energy Procedia ; 124). - S. 180-187. - eISSN 1876-6102
Zusammenfassung
In order to predict hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) layers, Gerke et al.[1] proposed a model which requires just one nuclear resonant reaction analysis (NRA) and one Fourier transform infrared spectroscopy (FT-IR) as input. This contribution presents the possibility to substitute this single NRA measurement by a calibrated glow discharge optical emission spectroscopy (GD-OES) measurement. In the hydrogen concentration range of 2-30 at% relevant for a-Si:H layers there are currently no commercial calibration standards available, leading to the necessity of laboratory standards. Hydrogen depth profiles of a-Si:H layers exhibit plateaus of constant hydrogen concentration in a range large enough to qualify them as calibration standards. Therefore, six plasma enhanced physical vapor deposited (PECVD) a-Si:H layers with different hydrogen concentrations were prepared as laboratory standards. The absolute hydrogen concentration was determined using the NRA technique and the layer thickness was determined with a focused ion beam (FIB) in a scanning electron microscope (SEM). These results enabled a calibration of the GD-OES setup for a-Si:H, which successfully reproduced the NRA measurements of Gerke et al. [1].
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530 Physik
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GD-OES a-Si:H hydrogen diffusion NRA
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7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3. Apr. 2017 - 5. Apr. 2017, Freiburg
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ISO 690STEFFENS, Jonathan, Hans–Werner BECKER, Sebastian GERKE, Sebastian JOOS, Giso HAHN, Barbara TERHEIDEN, 2017. Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017. Freiburg, 3. Apr. 2017 - 5. Apr. 2017. In: PREU, Ralf, ed.. 7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany. Amsterdam:Elsevier, pp. 180-187. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2017.09.315
BibTex
@inproceedings{Steffens2017Repla-41737,
  year={2017},
  doi={10.1016/j.egypro.2017.09.315},
  title={Replacing NRA by fast GD-OES measurements as input to a model based prediction of hydrogen diffusion in a-Si},
  number={124},
  publisher={Elsevier},
  address={Amsterdam},
  series={Energy Procedia},
  booktitle={7th International Conference on Silicon Photovoltaics, SiliconPV 2017, 3-5 April 2017, Freiburg, Germany},
  pages={180--187},
  editor={Preu, Ralf},
  author={Steffens, Jonathan and Becker, Hans–Werner and Gerke, Sebastian and Joos, Sebastian and Hahn, Giso and Terheiden, Barbara}
}
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