Increasing robustness of EpiWafer transfer process leading to carrier lifetimes of 1.6 ms using large scale production feasible substrate wafers

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2023
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Mürter, Juliane
Birkle, Nena
Sorgenfrei, Ralf
Drießen, Marion
Weiss, Charlotte
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AIP Conference Proceedings. AIP Publishing. 2023(2826), 120001. ISSN 0094-243X. eISSN 1551-7616. Available under: doi: 10.1063/5.0141132
Zusammenfassung

In the layer transfer process, the appropriate tuning of the porosity and the thickness of the porous silicon layer stack is crucial for the reorganization process und thus for the crystal quality of the epitaxially grown silicon wafer (EpiWafer). In anodic electrochemical etching of silicon, the layer thickness is controlled by the etch duration. For a substrate with a given doping density etched in a given electrolyte, the porosity can be adjusted solely through the applied current density. As this may be a limitation to obtain very different porosities for the layers of the stack, we used different electrolytes to etch the different layers of the stack. This way, higher porosity values can be achieved for the detachment layer while keeping low porosity for the seed layer. By doing so, the range of applicable process parameters is increased. Using a very thick stack of three porous layers, we demonstrate a minority carrier lifetime of about 1.6 ms for an n-type (1 Ωcm) EpiWafer grown on non-polished and not shiny-etched but KOH saw damage etched substrate wafer.

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ISO 690BOTCHAK, Yves Patrick, Gabriel MICARD, Juliane MÜRTER, Nena BIRKLE, Ralf SORGENFREI, Marion DRIESSEN, Charlotte WEISS, Barbara TERHEIDEN, 2023. Increasing robustness of EpiWafer transfer process leading to carrier lifetimes of 1.6 ms using large scale production feasible substrate wafers. In: AIP Conference Proceedings. AIP Publishing. 2023(2826), 120001. ISSN 0094-243X. eISSN 1551-7616. Available under: doi: 10.1063/5.0141132
BibTex
@article{Botchak2023Incre-69670,
  year={2023},
  doi={10.1063/5.0141132},
  title={Increasing robustness of EpiWafer transfer process leading to carrier lifetimes of 1.6 ms using large scale production feasible substrate wafers},
  number={2826},
  issn={0094-243X},
  journal={AIP Conference Proceedings},
  author={Botchak, Yves Patrick and Micard, Gabriel and Mürter, Juliane and Birkle, Nena and Sorgenfrei, Ralf and Drießen, Marion and Weiss, Charlotte and Terheiden, Barbara},
  note={Article Number: 120001}
}
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