Publikation: Theory of edge-state optical absorption in two-dimensional transition metal dichalcogenide flakes
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We develop an analytical model to describe sub-bandgap optical absorption in two-dimensional semiconducting transition metal dichalcogenide (s-TMD) nanoflakes. The material system represents an array of few-layer molybdenum disulfide crystals, randomly orientated in a polymer matrix. We propose that optical absorption involves direct transitions between electronic edge-states and bulk-bands, depends strongly on the carrier population, and is saturable with sufficient fluence. For excitation energies above half the bandgap, the excess energy is absorbed by the edge-state electrons, elevating their effective temperature. Our analytical expressions for the linear and nonlinear absorption could prove useful tools in the design of practical photonic devices based on s-TMDs.
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TRUSHIN, Maxim, Edmund J. R. KELLEHER, Tawfique HASAN, 2016. Theory of edge-state optical absorption in two-dimensional transition metal dichalcogenide flakes. In: Physical Review B. 2016, 94(15), 155301. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.94.155301BibTex
@article{Trushin2016Theor-37498,
year={2016},
doi={10.1103/PhysRevB.94.155301},
title={Theory of edge-state optical absorption in two-dimensional transition metal dichalcogenide flakes},
number={15},
volume={94},
issn={2469-9950},
journal={Physical Review B},
author={Trushin, Maxim and Kelleher, Edmund J. R. and Hasan, Tawfique},
note={10 pages, 4 figures, typos fixed as published Article Number: 155301}
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<dcterms:abstract xml:lang="eng">We develop an analytical model to describe sub-bandgap optical absorption in two-dimensional semiconducting transition metal dichalcogenide (s-TMD) nanoflakes. The material system represents an array of few-layer molybdenum disulfide crystals, randomly orientated in a polymer matrix. We propose that optical absorption involves direct transitions between electronic edge-states and bulk-bands, depends strongly on the carrier population, and is saturable with sufficient fluence. For excitation energies above half the bandgap, the excess energy is absorbed by the edge-state electrons, elevating their effective temperature. Our analytical expressions for the linear and nonlinear absorption could prove useful tools in the design of practical photonic devices based on s-TMDs.</dcterms:abstract>
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