Publikation:

Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs

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Datum

2013

Autor:innen

Yang, Kajian
Paajaste, Jonna
Suomalainen, Soile
Guina, Mircea

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http://nbn-resolving.de/urn:nbn:de:bsz:352-224915
DOI (zitierfähiger Link)
https://doi.org/10.1364/OE.21.004311
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Titel in einer weiteren Sprache

Modenkopplung in einem 2µm Tm,Ho:YAG-Lasers mit GaInAs- und GaSb-basierenden SESAMs
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Published

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Optics Express. 2013, 21(4), pp. 4311-4318. eISSN 1094-4087. Available under: doi: 10.1364/OE.21.004311

Zusammenfassung

We have investigated passive mode-locking of Tm,Ho:YAG lasers with GaInAs- and GaSb-based semiconductor saturable absorber mirrors (SESAMs). With a GaInAs-based SESAM, stable dual-wavelength mode-locking operation was achieved at 2091 nm and 2097 nm, generating pulses with duration of 56.9 ps and a maximum output power of 285 mW. By using the GaSb-based SESAMs, we could generate mode-locked pulses as short as 21.3 ps at 2091 nm with a maximum output power of 63 mW. We attribute the shorter pulse duration obtained with the GaSb SESAMs to the ultrafast recovery time of the absorption and higher nonlinearity compared to standard GaInAs SESAMs.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

modengekoppelter Laser, Sättigbare Absorberspiegel

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ISO 690YANG, Kajian, Dirk C. HEINECKE, Jonna PAAJASTE, Christoph KÖLBL, Thomas DEKORSY, Soile SUOMALAINEN, Mircea GUINA, 2013. Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs. In: Optics Express. 2013, 21(4), pp. 4311-4318. eISSN 1094-4087. Available under: doi: 10.1364/OE.21.004311
BibTex
@article{Yang2013-02-25Model-22491,
  year={2013},
  doi={10.1364/OE.21.004311},
  title={Mode-locking of 2 μm Tm,Ho:YAG laser with GaInAs and GaSb-based SESAMs},
  number={4},
  volume={21},
  journal={Optics Express},
  pages={4311--4318},
  author={Yang, Kajian and Heinecke, Dirk C. and Paajaste, Jonna and Kölbl, Christoph and Dekorsy, Thomas and Suomalainen, Soile and Guina, Mircea}
}
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