Spin-dependent electronic noise

Brandt, Martin S.; Goennenwein, Sebastian T. B.; Stutzmann, Martin

Spin-dependent electronic noise

Dateien

Zu diesem Dokument gibt es keine Dateien.

Datum

2001

Autor:innen

Brandt, Martin S.

Goennenwein, Sebastian T. B.

Stutzmann, Martin

DOI (zitierfähiger Link)

https://doi.org/10.1016/S1386-9477(01)00055-8

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Physica E: Low-dimensional Systems and Nanostructures. Elsevier. 2001, 10(1-3), pp. 67-70. ISSN 1386-9477. eISSN 1873-1759. Available under: doi: 10.1016/S1386-9477(01)00055-8

Zusammenfassung

The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si : H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a resonant reduction of the characteristic generation-recombination time constant. The g-factor observed identifies hopping in the valence band as the dominant spin-dependent transport process leading to electronic noise in this material.

Fachgebiet (DDC)

530 Physik

Schlagwörter

Electron spin resonance, Electronic noise, Noise-detected magnetic resonance, Spin-dependent tunneling

Zitieren

ISO 690

BRANDT, Martin S., Sebastian T. B. GOENNENWEIN, Martin STUTZMANN, 2001. Spin-dependent electronic noise. In: Physica E: Low-dimensional Systems and Nanostructures. Elsevier. 2001, 10(1-3), pp. 67-70. ISSN 1386-9477. eISSN 1873-1759. Available under: doi: 10.1016/S1386-9477(01)00055-8

BibTex

@article{Brandt2001Spind-53547,
  year={2001},
  doi={10.1016/S1386-9477(01)00055-8},
  title={Spin-dependent electronic noise},
  number={1-3},
  volume={10},
  issn={1386-9477},
  journal={Physica E: Low-dimensional Systems and Nanostructures},
  pages={67--70},
  author={Brandt, Martin S. and Goennenwein, Sebastian T. B. and Stutzmann, Martin}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/53547">
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-04-29T14:12:13Z</dc:date>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si : H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a resonant reduction of the characteristic generation-recombination time constant. The g-factor observed identifies hopping in the valence band as the dominant spin-dependent transport process leading to electronic noise in this material.</dcterms:abstract>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Brandt, Martin S.</dc:contributor>
    <dc:language>eng</dc:language>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Brandt, Martin S.</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2021-04-29T14:12:13Z</dcterms:available>
    <dc:creator>Goennenwein, Sebastian T. B.</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/53547"/>
    <dcterms:title>Spin-dependent electronic noise</dcterms:title>
    <dc:contributor>Goennenwein, Sebastian T. B.</dc:contributor>
    <dc:creator>Stutzmann, Martin</dc:creator>
    <dc:contributor>Stutzmann, Martin</dc:contributor>
    <dcterms:issued>2001</dcterms:issued>
  </rdf:Description>
</rdf:RDF>

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