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Spin-dependent electronic noise

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Datum

2001

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Brandt, Martin S.
Stutzmann, Martin

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https://doi.org/10.1016/S1386-9477(01)00055-8
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Physica E: Low-dimensional Systems and Nanostructures. Elsevier. 2001, 10(1-3), pp. 67-70. ISSN 1386-9477. eISSN 1873-1759. Available under: doi: 10.1016/S1386-9477(01)00055-8

Zusammenfassung

The influence of electron spin resonance on generation-recombination noise is studied. In nin-photoconductors made from amorphous hydrogenated silicon (a-Si : H), a resonant decrease of the noise power density is observed. Both the sign of the noise-detected magnetic resonance (NDMR) signal as well as the frequency dependence of the signal amplitude can be described by a resonant reduction of the characteristic generation-recombination time constant. The g-factor observed identifies hopping in the valence band as the dominant spin-dependent transport process leading to electronic noise in this material.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Electron spin resonance, Electronic noise, Noise-detected magnetic resonance, Spin-dependent tunneling

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ISO 690BRANDT, Martin S., Sebastian T. B. GOENNENWEIN, Martin STUTZMANN, 2001. Spin-dependent electronic noise. In: Physica E: Low-dimensional Systems and Nanostructures. Elsevier. 2001, 10(1-3), pp. 67-70. ISSN 1386-9477. eISSN 1873-1759. Available under: doi: 10.1016/S1386-9477(01)00055-8
BibTex
@article{Brandt2001Spind-53547,
  year={2001},
  doi={10.1016/S1386-9477(01)00055-8},
  title={Spin-dependent electronic noise},
  number={1-3},
  volume={10},
  issn={1386-9477},
  journal={Physica E: Low-dimensional Systems and Nanostructures},
  pages={67--70},
  author={Brandt, Martin S. and Goennenwein, Sebastian T. B. and Stutzmann, Martin}
}
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