Publikation: Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors
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Semiconducting self-assembled monolayers (SAMs) represent highly relevant components for the fabrication of organic thin-film electronics because they enable the precise formation of active π-conjugates in terms of orientation and layer thickness. In this work, we demonstrate self-assembled monolayer field-effect transistors (SAMFETs) composed of phosphonic acid oligomers of 3-hexylthiophene (oligothiophenes-OT) with systematic variations of thiophene repeating units (5, 10, and 20). The devices exhibit stable lateral charge transport with increased mobility as a function of thiophene unit counts. Importantly, our work reveals the packing and intermolecular order of varied-chain-length SAMs at the molecular scale via X-ray reflectivity (XRR) and quantitative X-ray photoelectron spectroscopy (XPS). Short oligomers (OT5-PA and OT10-PA) arrange almost perpendicular to the substrate, forming highly ordered SAMs, whereas the long-chain OT20-PA exhibits a folded structure. By tuning the molecular order in the monolayers via the SAM substitution reaction, the OT20-PA devices show a tripling in mobility.
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ZHAO, Baolin, Bastian GOTHE, Arthur GROH, Thomas SCHMALTZ, Johannes WILL, Hans-Georg STEINRÜCK, Tobias UNRUH, Stefan MECKING, Marcus HALIK, 2021. Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors. In: ACS Applied Materials & Interfaces. American Chemical Society (ACS). 2021, 13(27), pp. 32461-32466. ISSN 1944-8244. eISSN 1944-8252. Available under: doi: 10.1021/acsami.1c05764BibTex
@article{Zhao2021-07-14Oligo-54471, year={2021}, doi={10.1021/acsami.1c05764}, title={Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors}, number={27}, volume={13}, issn={1944-8244}, journal={ACS Applied Materials & Interfaces}, pages={32461--32466}, author={Zhao, Baolin and Gothe, Bastian and Groh, Arthur and Schmaltz, Thomas and Will, Johannes and Steinrück, Hans-Georg and Unruh, Tobias and Mecking, Stefan and Halik, Marcus} }
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