Extremely high currents in RGS (Ribbon Growth on Substrate) silicon solar cells by 3D carrier collecting channels

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Hahn_2-meh4lfuz623e5.pdf(457.31 KB)
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2000
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Häßler, C.
Langenkamp, M.
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urn:nbn:de:bsz:352-2-meh4lfuz623e5
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10th Workshop on Crystalline Silicon Solar Cell Materials and Processes : Extended Abstracts and Papers. - Golden, Colorado : National Renewable Energy Laboratory, 2000. - pp. 208-211
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530 Physics
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10th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Aug 14, 2000 - Aug 16, 2000, Copper Mountain, Colorado
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ISO 690HAHN, Giso, C. HÄSSLER, M. LANGENKAMP, 2000. Extremely high currents in RGS (Ribbon Growth on Substrate) silicon solar cells by 3D carrier collecting channels. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes. Copper Mountain, Colorado, Aug 14, 2000 - Aug 16, 2000. In: 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes : Extended Abstracts and Papers. Golden, Colorado:National Renewable Energy Laboratory, pp. 208-211
BibTex
@inproceedings{Hahn2000Extre-33077,
  year={2000},
  title={Extremely high currents in RGS (Ribbon Growth on Substrate) silicon solar cells by 3D carrier collecting channels},
  url={https://www.nrel.gov/docs/fy00osti/28844.pdf},
  publisher={National Renewable Energy Laboratory},
  address={Golden, Colorado},
  booktitle={10th Workshop on Crystalline Silicon Solar Cell Materials and Processes : Extended Abstracts and Papers},
  pages={208--211},
  author={Hahn, Giso and Häßler, C. and Langenkamp, M.}
}
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https://www.nrel.gov/docs/fy00osti/28844.pdf
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