Publikation: Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K
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2011
Autor:innen
Bommer, Moritz
Schulz, Wolfgang-Michael
Roßbach, Robert
Jetter, Michael
Michler, Peter
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Journal of Applied Physics. 2011, 110(6), 063108. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.3633218
Zusammenfassung
Systematic excitation power and temperature-dependent measurements on the emission lines of single self-assembled InP/(Al0.20Ga0.80)0.51In0.49P quantum dots embedded in micropillars have been performed. The quantum dots were excited optically via a pulsed laser and their luminescence was collected using a micro-photoluminescence setup. The exciton and biexciton intensity, linewidth, and spectral position was investigated in a temperature range from 4 K up to 130 K. Single-photon emission from the quantum dots is presented up to a temperature of 100 K, confirmed by photon-statistics measurements.
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530 Physik
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aluminium compounds, biexcitons, gallium compounds, III-V semiconductors, indium compounds, photoluminescence, self-assembly, semiconductor quantum dots
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BOMMER, Moritz, Wolfgang-Michael SCHULZ, Robert ROSSBACH, Michael JETTER, Peter MICHLER, Tim THOMAY, Alfred LEITENSTORFER, Rudolf BRATSCHITSCH, 2011. Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K. In: Journal of Applied Physics. 2011, 110(6), 063108. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.3633218BibTex
@article{Bommer2011Trigg-19188,
year={2011},
doi={10.1063/1.3633218},
title={Triggered single-photon emission in the red spectral range from optically excited InP/(Al,Ga)InP quantum dots embedded in micropillars up to 100 K},
number={6},
volume={110},
issn={0021-8979},
journal={Journal of Applied Physics},
author={Bommer, Moritz and Schulz, Wolfgang-Michael and Roßbach, Robert and Jetter, Michael and Michler, Peter and Thomay, Tim and Leitenstorfer, Alfred and Bratschitsch, Rudolf},
note={Article Number: 063108}
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<dcterms:abstract xml:lang="eng">Systematic excitation power and temperature-dependent measurements on the emission lines of single self-assembled InP/(Al<sub>0.20</sub>Ga<sub>0.80</sub>)<sub>0.51</sub>In<sub>0.49</sub>P quantum dots embedded in micropillars have been performed. The quantum dots were excited optically via a pulsed laser and their luminescence was collected using a micro-photoluminescence setup. The exciton and biexciton intensity, linewidth, and spectral position was investigated in a temperature range from 4 K up to 130 K. Single-photon emission from the quantum dots is presented up to a temperature of 100 K, confirmed by photon-statistics measurements.</dcterms:abstract>
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