Diode Laser-Crystallization for the Formation of Passivating Contacts for Solar Cells
Diode Laser-Crystallization for the Formation of Passivating Contacts for Solar Cells
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2022
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Gawlik, Annett
Dellith, Andrea
Jia, Guobin
Dellith, Jan
Plentz, Jonathan
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Physica Status Solidi (RRL) - Rapid Research Letters ; 16 (2022), 5. - 2100537. - Wiley. - ISSN 1862-6254. - eISSN 1862-6270
Abstract
A new method of diode laser treatment of passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a-Si) layers deposited on solar-grade Czochralski wafers with SiOx tunneling layers is investigated. In a first step, an interface oxide is grown and a highly doped n-type a-Si layer is deposited on both sides by electron beam evaporation. In a next step, the laser treatment is applied. Two different scanning speeds of 15 and 20 mm s−1 are used. Electron backscattering diffraction and quasi-steady-state photo conductance measurements indicate that the a-Si layer can be crystallized without breaking up the thin oxide layer. To determine the best parameters, the lifetime and the implied open-circuit voltage for each laser power are measured. The first results show a fitted lifetime of 4.06 ms and an implied open-circuit voltage up to 711 mV after a passivation step.
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GAWLIK, Annett, Raphael GLATTHAAR, Andrea DELLITH, Guobin JIA, Jan DELLITH, Barbara TERHEIDEN, Jonathan PLENTZ, 2022. Diode Laser-Crystallization for the Formation of Passivating Contacts for Solar Cells. In: Physica Status Solidi (RRL) - Rapid Research Letters. Wiley. 16(5), 2100537. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.202100537BibTex
@article{Gawlik2022-05Diode-56962, year={2022}, doi={10.1002/pssr.202100537}, title={Diode Laser-Crystallization for the Formation of Passivating Contacts for Solar Cells}, number={5}, volume={16}, issn={1862-6254}, journal={Physica Status Solidi (RRL) - Rapid Research Letters}, author={Gawlik, Annett and Glatthaar, Raphael and Dellith, Andrea and Jia, Guobin and Dellith, Jan and Terheiden, Barbara and Plentz, Jonathan}, note={Article Number: 2100537} }
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<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/56962"> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:language>eng</dc:language> <dc:creator>Gawlik, Annett</dc:creator> <dc:creator>Plentz, Jonathan</dc:creator> <dcterms:issued>2022-05</dcterms:issued> <dcterms:abstract xml:lang="eng">A new method of diode laser treatment of passivating contacts for solar cells application based on electron beam evaporated highly doped amorphous silicon (a-Si) layers deposited on solar-grade Czochralski wafers with SiOx tunneling layers is investigated. In a first step, an interface oxide is grown and a highly doped n-type a-Si layer is deposited on both sides by electron beam evaporation. In a next step, the laser treatment is applied. Two different scanning speeds of 15 and 20 mm s<sup>−1</sup> are used. Electron backscattering diffraction and quasi-steady-state photo conductance measurements indicate that the a-Si layer can be crystallized without breaking up the thin oxide layer. To determine the best parameters, the lifetime and the implied open-circuit voltage for each laser power are measured. The first results show a fitted lifetime of 4.06 ms and an implied open-circuit voltage up to 711 mV after a passivation step.</dcterms:abstract> <dc:contributor>Plentz, Jonathan</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/56962/1/Gawlik_2-mu8375qw885l8.pdf"/> <dc:rights>Attribution-NonCommercial 4.0 International</dc:rights> <dc:creator>Glatthaar, Raphael</dc:creator> <dc:creator>Jia, Guobin</dc:creator> <dc:contributor>Gawlik, Annett</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dc:creator>Terheiden, Barbara</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-03-23T10:12:31Z</dcterms:available> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2022-03-23T10:12:31Z</dc:date> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dcterms:title>Diode Laser-Crystallization for the Formation of Passivating Contacts for Solar Cells</dcterms:title> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/56962/1/Gawlik_2-mu8375qw885l8.pdf"/> <dc:creator>Dellith, Jan</dc:creator> <dc:creator>Dellith, Andrea</dc:creator> <dc:contributor>Glatthaar, Raphael</dc:contributor> <dc:contributor>Dellith, Andrea</dc:contributor> <dc:contributor>Dellith, Jan</dc:contributor> <dc:contributor>Jia, Guobin</dc:contributor> <dc:contributor>Terheiden, Barbara</dc:contributor> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc/4.0/"/> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/56962"/> </rdf:Description> </rdf:RDF>
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