Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes
Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes
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2014
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Solar Energy Materials and Solar Cells ; 131 (2014). - S. 2-8. - ISSN 0927-0248. - eISSN 1879-3398
Zusammenfassung
Recombination active boron-oxygen related defects typically limit the efficiency of solar cells made from boron-doped, oxygen-rich silicon. This limitation can be overcome by applying a regeneration process that requires slightly elevated temperatures, carrier injection, and the presence of hydrogen in the silicon substrate in order to regenerate quickly and completely.
The influence of mid-temperature steps up to 400°C on the regeneration kinetics is investigated and the results can be explained with the efficacy of the regeneration process depending on the hydrogen bonding states prior to regeneration. Boron-hydrogen pairs are found to be good candidates to be the relevant hydrogen source during regeneration. The long-term stability of the regenerated state is tested under solar cell operating conditions, and the thermal activation energy of its destabilization is determined to be 1.25 ± 0.05 eV.
Limiting factors for high-speed regeneration processes are discussed, and a high temperature / high illumination procedure is presented, allowing complete regeneration in less than 10 s. This makes regeneration feasible as an in-line process in solar cell production.
The influence of mid-temperature steps up to 400°C on the regeneration kinetics is investigated and the results can be explained with the efficacy of the regeneration process depending on the hydrogen bonding states prior to regeneration. Boron-hydrogen pairs are found to be good candidates to be the relevant hydrogen source during regeneration. The long-term stability of the regenerated state is tested under solar cell operating conditions, and the thermal activation energy of its destabilization is determined to be 1.25 ± 0.05 eV.
Limiting factors for high-speed regeneration processes are discussed, and a high temperature / high illumination procedure is presented, allowing complete regeneration in less than 10 s. This makes regeneration feasible as an in-line process in solar cell production.
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530 Physik
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silicon, boron-oxygen, hydrogen, regeneration
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WILKING, Svenja, Cornelius BECKH, Sebastian EBERT, Axel HERGUTH, Giso HAHN, 2014. Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes. In: Solar Energy Materials and Solar Cells. 131, pp. 2-8. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2014.06.027BibTex
@article{Wilking2014Influ-29450, year={2014}, doi={10.1016/j.solmat.2014.06.027}, title={Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes}, volume={131}, issn={0927-0248}, journal={Solar Energy Materials and Solar Cells}, pages={2--8}, author={Wilking, Svenja and Beckh, Cornelius and Ebert, Sebastian and Herguth, Axel and Hahn, Giso} }
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