Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors
Lade...
Dateien
Zu diesem Dokument gibt es keine Dateien.
Datum
2000
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Mathematical Models and Methods in Applied Sciences. 2000, 10(06), pp. 833-861. ISSN 0218-2025. eISSN 1793-6314. Available under: doi: 10.1142/S0218202500000434
Zusammenfassung
The numerical integration of the hydrodynamical model of semiconductors based on extended thermodynamics has been tackled. On account of the mathematical complexity of the system, no theoretical conditions of convergence are available for the existing schemes. Therefore in order to obtain numerical solution it was almost mandatory to resort to a cross-validation comparing the results given by two different methods. The kinetic scheme and the finite difference method represented by a suitable modification of the Nessyahu–Tadmor scheme furnish numerical results for the ballistic diode problem in good agreement even for non-smooth solutions.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
510 Mathematik
Schlagwörter
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
ANILE, Angelo Marcello, Michael JUNK, Vittorio ROMANO, Giovanni RUSSO, 2000. Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors. In: Mathematical Models and Methods in Applied Sciences. 2000, 10(06), pp. 833-861. ISSN 0218-2025. eISSN 1793-6314. Available under: doi: 10.1142/S0218202500000434BibTex
@article{Anile2000Cross-25475, year={2000}, doi={10.1142/S0218202500000434}, title={Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors}, number={06}, volume={10}, issn={0218-2025}, journal={Mathematical Models and Methods in Applied Sciences}, pages={833--861}, author={Anile, Angelo Marcello and Junk, Michael and Romano, Vittorio and Russo, Giovanni} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/25475"> <foaf:homepage rdf:resource="http://localhost:8080/"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-18T07:29:34Z</dcterms:available> <dc:contributor>Russo, Giovanni</dc:contributor> <dcterms:bibliographicCitation>Mathematical models & methods in applied sciences : M3AS ; 10 (2000), 6. - S. 833-861</dcterms:bibliographicCitation> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/25475"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/39"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/39"/> <dcterms:abstract xml:lang="eng">The numerical integration of the hydrodynamical model of semiconductors based on extended thermodynamics has been tackled. On account of the mathematical complexity of the system, no theoretical conditions of convergence are available for the existing schemes. Therefore in order to obtain numerical solution it was almost mandatory to resort to a cross-validation comparing the results given by two different methods. The kinetic scheme and the finite difference method represented by a suitable modification of the Nessyahu–Tadmor scheme furnish numerical results for the ballistic diode problem in good agreement even for non-smooth solutions.</dcterms:abstract> <dc:contributor>Romano, Vittorio</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2013-12-18T07:29:34Z</dc:date> <dcterms:title>Cross-Validation of numerical schemes for extended hydrodynamical models of semiconductors</dcterms:title> <dc:rights>terms-of-use</dc:rights> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:creator>Anile, Angelo Marcello</dc:creator> <dc:creator>Junk, Michael</dc:creator> <dc:language>eng</dc:language> <dc:creator>Russo, Giovanni</dc:creator> <dc:creator>Romano, Vittorio</dc:creator> <dcterms:issued>2000</dcterms:issued> <dc:contributor>Anile, Angelo Marcello</dc:contributor> <dc:contributor>Junk, Michael</dc:contributor> </rdf:Description> </rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Nein