Spin-wave resonances and surface spin pinning in Ga1−xMnxAs thin films
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Physical Review B. American Physical Society (APS). 2009, 79(4), 045205. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.79.045205
Zusammenfassung
We investigate the dependence of the spin-wave resonance (SWR) spectra of Ga0.95Mn0.05As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.
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BIHLER, Christoph, Wladimir SCHOCH, Wolfgang LIMMER, Sebastian T. B. GOENNENWEIN, Martin S. BRANDT, 2009. Spin-wave resonances and surface spin pinning in Ga1−xMnxAs thin films. In: Physical Review B. American Physical Society (APS). 2009, 79(4), 045205. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.79.045205BibTex
@article{Bihler2009Spinw-52594,
year={2009},
doi={10.1103/PhysRevB.79.045205},
title={Spin-wave resonances and surface spin pinning in Ga<sub>1−x</sub>Mn<sub>x</sub>As thin films},
number={4},
volume={79},
issn={2469-9950},
journal={Physical Review B},
author={Bihler, Christoph and Schoch, Wladimir and Limmer, Wolfgang and Goennenwein, Sebastian T. B. and Brandt, Martin S.},
note={Article Number: 045205}
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<dcterms:abstract xml:lang="eng">We investigate the dependence of the spin-wave resonance (SWR) spectra of Ga<sub>0.95</sub>Mn<sub>0.05</sub>As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.</dcterms:abstract>
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