Valley splitting depending on the size and location of a silicon quantum dot

Lima, Jonas R. F.; Burkard, Guido

Valley splitting depending on the size and location of a silicon quantum dot

Dateien

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Datum

2024

Autor:innen

Lima, Jonas R. F.

Burkard, Guido

DOI (zitierfähiger Link)

https://doi.org/10.1103/physrevmaterials.8.036202

Angaben zur Forschungsförderung

Institutionen der Bundesrepublik Deutschland: 13N15657

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Physical Review Materials. American Physical Society (APS). 2024, 8(3), 036202. eISSN 2475-9953. Available under: doi: 10.1103/physrevmaterials.8.036202

Zusammenfassung

The valley splitting (VS) of a silicon quantum dot plays an important role for the performance and scalability of silicon spin qubits. In this paper we investigate the VS of a SiGe/Si/SiGe heterostructure as a function of the size and location of the silicon quantum dot. We use the effective mass approach to describe a realistic system, which takes into account concentration fluctuations at the Si/SiGe interfaces and also the interface roughness. We predict that the size of the quantum dot is an important parameter for the enhancement of the VS and it can also induce a transition between the disorder-dominated to deterministic-enhanced regimes. Analyzing how the VS changes when we move the quantum dot in a specific direction, we obtain that the size of the quantum dot can be used to reduce the variability of the VS, which is relevant for charge/spin shuttling.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

LIMA, Jonas R. F., Guido BURKARD, 2024. Valley splitting depending on the size and location of a silicon quantum dot. In: Physical Review Materials. American Physical Society (APS). 2024, 8(3), 036202. eISSN 2475-9953. Available under: doi: 10.1103/physrevmaterials.8.036202

BibTex

@article{Lima2024-03-19Valle-69787,
  year={2024},
  doi={10.1103/physrevmaterials.8.036202},
  title={Valley splitting depending on the size and location of a silicon quantum dot},
  number={3},
  volume={8},
  journal={Physical Review Materials},
  author={Lima, Jonas R. F. and Burkard, Guido},
  note={Article Number: 036202}
}

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