High-Field Approximations of the Energy-Transport Model for Semiconductors with Non-Parabolic Band Structure

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2000
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Degond, Pierre
Jüngel, Ansgar
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An asymptotic analysis of the energy-transport equations for semiconductors with the scaled energy relaxation time as small parameter is performed. Using a variant of the Chapman-Enskog method, high-field drift-diffusion models are derived. Furthermore, the dependence of the macroscopic parameters such as the diffusivity are investigated for parabolic and non-parabolic band approximations (in the sense of Kane). Explicit expressions of the physical parameters are obtained.

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ISO 690DEGOND, Pierre, Ansgar JÜNGEL, 2000. High-Field Approximations of the Energy-Transport Model for Semiconductors with Non-Parabolic Band Structure
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@unpublished{Degond2000HighF-6184,
  year={2000},
  title={High-Field Approximations of the Energy-Transport Model for Semiconductors with Non-Parabolic Band Structure},
  author={Degond, Pierre and Jüngel, Ansgar}
}
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