Publikation:

Record efficiency of 16.7% in EFG ribbon silicium

Lade...
Vorschaubild

Dateien

Geiger_2-tgziaiezbe8a8.pdf
Geiger_2-tgziaiezbe8a8.pdfGröße: 1.26 MBDownloads: 49

Datum

2003

Autor:innen

Geiger, Patric
Fath, Peter

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

DOI (zitierfähiger Link)
ArXiv-ID

Internationale Patentnummer

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung
Open Access Green
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published

Erschienen in

KUROKAWA, Kosuke, ed. and others. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C. Piscataway, NJ: IEEE, 2003, pp. 1392-1394. ISBN 4-9901816-2-X

Zusammenfassung

Recently obtained results of a process monitoring based on spatially resolved lifetime measurements revealed that bulk lifetime values above 300 /spl mu/s can be reached within edge-defined film-fed growth (EFG) silicon ribbons with the help of gettering and hydrogen passivation steps. Therefore, recombination losses at the wafer backside have to be considered in this material with low as grown lifetimes. The solar cell processing sequence has been adapted to the needs of this material. Besides phosphorous gettering and remote hydrogen plasma passivation a screen printed back surface field has been implemented instead of an evaporated and subsequently alloyed thin Al BSF used for Al gettering. This allows to make use of low energy photons in regions with very high bulk lifetimes. In this way an independently confirmed solar cell efficiency of 16.7% has been obtained which is the highest value that has been reported so far.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Silicon, Gettering, Hydrogen, Passivation, Photovoltaic cells, Monitoring, Spatial resolution, Lifetime estimation, Plasma displays, Plasma materials processing

Konferenz

3rd World Conference on Photovoltaic Energy Conversion : 3rd WC PVSEC, 11. Mai 2003 - 18. Mai 2003, Osaka, Japan
Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690GEIGER, Patric, Giso HAHN, Peter FATH, 2003. Record efficiency of 16.7% in EFG ribbon silicium. 3rd World Conference on Photovoltaic Energy Conversion : 3rd WC PVSEC. Osaka, Japan, 11. Mai 2003 - 18. Mai 2003. In: KUROKAWA, Kosuke, ed. and others. Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C. Piscataway, NJ: IEEE, 2003, pp. 1392-1394. ISBN 4-9901816-2-X
BibTex
@inproceedings{Geiger2003Recor-42205,
  year={2003},
  title={Record efficiency of 16.7% in EFG ribbon silicium},
  url={https://ieeexplore.ieee.org/document/1306182/},
  isbn={4-9901816-2-X},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={Proceedings of 3rd World Conference on Photovoltaic Energy Conversion : Volume C},
  pages={1392--1394},
  editor={Kurokawa, Kosuke},
  author={Geiger, Patric and Hahn, Giso and Fath, Peter}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/42205">
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dcterms:title>Record efficiency of 16.7% in EFG ribbon silicium</dcterms:title>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-04-30T13:30:04Z</dcterms:available>
    <dc:language>eng</dc:language>
    <dc:contributor>Geiger, Patric</dc:contributor>
    <dc:contributor>Fath, Peter</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-04-30T13:30:04Z</dc:date>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:abstract xml:lang="eng">Recently obtained results of a process monitoring based on spatially resolved lifetime measurements revealed that bulk lifetime values above 300 /spl mu/s can be reached within edge-defined film-fed growth (EFG) silicon ribbons with the help of gettering and hydrogen passivation steps. Therefore, recombination losses at the wafer backside have to be considered in this material with low as grown lifetimes. The solar cell processing sequence has been adapted to the needs of this material. Besides phosphorous gettering and remote hydrogen plasma passivation a screen printed back surface field has been implemented instead of an evaporated and subsequently alloyed thin Al BSF used for Al gettering. This allows to make use of low energy photons in regions with very high bulk lifetimes. In this way an independently confirmed solar cell efficiency of 16.7% has been obtained which is the highest value that has been reported so far.</dcterms:abstract>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/42205/3/Geiger_2-tgziaiezbe8a8.pdf"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/42205/3/Geiger_2-tgziaiezbe8a8.pdf"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Fath, Peter</dc:creator>
    <dcterms:issued>2003</dcterms:issued>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/42205"/>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Geiger, Patric</dc:creator>
    <dc:creator>Hahn, Giso</dc:creator>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt

Prüfdatum der URL

2018-04-30

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Nein
Begutachtet
Diese Publikation teilen