Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators
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Physical Review B. 2014, 89(10), 100102(R). ISSN 1098-0121. eISSN 1095-3795. Available under: doi: 10.1103/PhysRevB.89.100102
Zusammenfassung
The damping rates of high quality factor nanomechanical resonators are well beyond intrinsic limits. Here, we explore the underlying microscopic loss mechanisms by investigating the temperature-dependent damping of the fundamental and third harmonic transverse flexural mode of a doubly clamped silicon nitride string. It exhibits characteristic maxima reminiscent of two-level defects typical for amorphous materials. Coupling to those defects relaxes the momentum selection rules, allowing energy transfer from discrete long-wavelength resonator modes to the high frequency phonon environment.
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FAUST, Thomas, Johannes RIEGER, Maximilian SEITNER, Jörg P. KOTTHAUS, Eva M. WEIG, 2014. Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators. In: Physical Review B. 2014, 89(10), 100102(R). ISSN 1098-0121. eISSN 1095-3795. Available under: doi: 10.1103/PhysRevB.89.100102BibTex
@article{Faust2014Signa-30913, year={2014}, doi={10.1103/PhysRevB.89.100102}, title={Signatures of two-level defects in the temperature-dependent damping of nanomechanical silicon nitride resonators}, number={10}, volume={89}, issn={1098-0121}, journal={Physical Review B}, author={Faust, Thomas and Rieger, Johannes and Seitner, Maximilian and Kotthaus, Jörg P. and Weig, Eva M.}, note={Article Number: 100102(R)} }
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