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Increased terahertz emission from thermally treated GaSb

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Increased_terahertz_emission_from_thermally_treated_GaSb.pdf
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2004

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Winnerl, Stephan
Sinning, Steffen
Helm, Manfred

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-44793
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https://doi.org/10.1063/1.1805197
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Attribution-NonCommercial-NoDerivs 2.0 Generic

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Published

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Applied Physics Letters. 2004, 85(15), pp. 3092-3094. Available under: doi: 10.1063/1.1805197

Zusammenfassung

We report on the terahertz (THz) emission from GaSb surfaces with modified surface stochiometry. While very weak emission is observed from virgin GaSb wafers, the emission is significantly increased by a single thermal treatment of the wafers. Optimum emission is observed for 500 °C thermal annealing. The reason for the THz emission is a surface electric field induced by thermal decomposition of the surface, as corroborated by Raman spectroscopy.

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530 Physik

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ISO 690WINNERL, Stephan, Steffen SINNING, Thomas DEKORSY, Manfred HELM, 2004. Increased terahertz emission from thermally treated GaSb. In: Applied Physics Letters. 2004, 85(15), pp. 3092-3094. Available under: doi: 10.1063/1.1805197
BibTex
@article{Winnerl2004Incre-9093,
  year={2004},
  doi={10.1063/1.1805197},
  title={Increased terahertz emission from thermally treated GaSb},
  number={15},
  volume={85},
  journal={Applied Physics Letters},
  pages={3092--3094},
  author={Winnerl, Stephan and Sinning, Steffen and Dekorsy, Thomas and Helm, Manfred}
}
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