Increased terahertz emission from thermally treated GaSb

Winnerl, Stephan; Sinning, Steffen; Dekorsy, Thomas; Helm, Manfred

Increased terahertz emission from thermally treated GaSb

Dateien

Increased_terahertz_emission_from_thermally_treated_GaSb.pdfGröße: 279.75 KBDownloads: 501

Datum

2004

Autor:innen

Winnerl, Stephan

Sinning, Steffen

Dekorsy, Thomas

Helm, Manfred

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Applied Physics Letters. 2004, 85(15), pp. 3092-3094. Available under: doi: 10.1063/1.1805197

Zusammenfassung

We report on the terahertz (THz) emission from GaSb surfaces with modified surface stochiometry. While very weak emission is observed from virgin GaSb wafers, the emission is significantly increased by a single thermal treatment of the wafers. Optimum emission is observed for 500 °C thermal annealing. The reason for the THz emission is a surface electric field induced by thermal decomposition of the surface, as corroborated by Raman spectroscopy.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

WINNERL, Stephan, Steffen SINNING, Thomas DEKORSY, Manfred HELM, 2004. Increased terahertz emission from thermally treated GaSb. In: Applied Physics Letters. 2004, 85(15), pp. 3092-3094. Available under: doi: 10.1063/1.1805197

BibTex

@article{Winnerl2004Incre-9093,
  year={2004},
  doi={10.1063/1.1805197},
  title={Increased terahertz emission from thermally treated GaSb},
  number={15},
  volume={85},
  journal={Applied Physics Letters},
  pages={3092--3094},
  author={Winnerl, Stephan and Sinning, Steffen and Dekorsy, Thomas and Helm, Manfred}
}

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