Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon
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2001
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Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea. Daejeon: Korea Institute of Energy Research, 2001, pp. 191-192
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530 Physik
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12th International Photovoltaic Science and Engineering Conference, 11. Juni 2001 - 15. Juni 2001, Jeju, Korea
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HAHN, Giso, Patric GEIGER, D. SONTAG, Peter FATH, Ernst BUCHER, 2001. Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon. 12th International Photovoltaic Science and Engineering Conference. Jeju, Korea, 11. Juni 2001 - 15. Juni 2001. In: Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea. Daejeon: Korea Institute of Energy Research, 2001, pp. 191-192BibTex
@inproceedings{Hahn2001Influ-33108, year={2001}, title={Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon}, publisher={Korea Institute of Energy Research}, address={Daejeon}, booktitle={Technical Digest : 12th International Photovoltaic Science and Engineering Conference ; June 11-15/2001, Jeju, Korea}, pages={191--192}, author={Hahn, Giso and Geiger, Patric and Sontag, D. and Fath, Peter and Bucher, Ernst} }
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