Comparison of gettering effects during phosphorous diffusion for one- and double-sided emitters

Schneider, A.; Kopecek, Radovan; Hahn, Giso; Noel, S.; Fath, Peter

Comparison of gettering effects during phosphorous diffusion for one- and double-sided emitters

Dateien

Schneider_2-vosbpw456pa75.pdfGröße: 282.37 KBDownloads: 222

Datum

2005

Autor:innen

Schneider, A.

Kopecek, Radovan

Hahn, Giso

Noel, S.

Fath, Peter

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Physik

Publikationstyp

Beitrag zu einem Konferenzband

Publikationsstatus

Published

Erschienen in

IEEE, , ed.. Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. Piscataway, NJ: IEEE Operations Center, 2005, pp. 1051-1054. ISBN 0-7803-8707-4. Available under: doi: 10.1109/PVSC.2005.1488314

Zusammenfassung

A key issue for future solar cell processes is a diffusion sequence which enables fast and clean production, for example by spin-on and spray-on dopants. These diffusion processes have in common that the emitter diffusion is applied on one wafer side, whereas the POCl3 emitter process leads to double-sided doping. For higher throughput the POCl3 process could be adapted by using one slot for two wafers. This so called back-to-back process leads to one-sided emitters and increases industrial throughput but could result in lower cell efficiency due to reduced gettering during phosphorus diffusion. In this study we investigate the difference in solar cell performance for cells processed in a back-to-back and standard POCl3 process. Furthermore, X-ray fluorescence and SIMS measurements were performed on Cz material to study the effect of emitter over-compensation by aluminium. These experiments should clarify if the phosphorus of double-sided emitter cells is partly overcompensated or diffuses into the Al layer of the rear contact.

Fachgebiet (DDC)

530 Physik

Konferenz

IEEE Photovoltaic Specialists Conference ; 31, 3. Jan. 2005 - 7. Jan. 2005, Lake Buena Vista, FL

Zitieren

ISO 690

SCHNEIDER, A., Radovan KOPECEK, Giso HAHN, S. NOEL, Peter FATH, 2005. Comparison of gettering effects during phosphorous diffusion for one- and double-sided emitters. IEEE Photovoltaic Specialists Conference ; 31. Lake Buena Vista, FL, 3. Jan. 2005 - 7. Jan. 2005. In: IEEE, , ed.. Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005. Piscataway, NJ: IEEE Operations Center, 2005, pp. 1051-1054. ISBN 0-7803-8707-4. Available under: doi: 10.1109/PVSC.2005.1488314

BibTex

@inproceedings{Schneider2005Compa-30868,
  year={2005},
  doi={10.1109/PVSC.2005.1488314},
  title={Comparison of gettering effects during phosphorous diffusion for one- and double-sided emitters},
  isbn={0-7803-8707-4},
  publisher={IEEE Operations Center},
  address={Piscataway, NJ},
  booktitle={Conference record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 : Coronado Springs Resort, Lake Buena Vista, FL, January 3 - 7, 2005},
  pages={1051--1054},
  editor={IEEE},
  author={Schneider, A. and Kopecek, Radovan and Hahn, Giso and Noel, S. and Fath, Peter}
}

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