Publikation: Electronic structure of EuO spin filter tunnel contacts directly on silicon
Dateien
Datum
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
DOI (zitierfähiger Link)
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Publikationsstatus
Erschienen in
Zusammenfassung
We present an electronic structure study of a magnetic oxide/ semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon‐based spintronics devices. A combined electronic structure analysis of Eu core levels and valence bands using hard X‐ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO “spin filter” tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices. Hard X‐ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
Schlagwörter
Konferenz
Rezension
Zitieren
ISO 690
CASPERS, Christian, Martina MÜLLER, Alexander X. GRAY, Alexander M. KAISER, Andrei GLOSKOVSKII, Charles S. FADLEY, Wolfgang DRUBE, Claus M. SCHNEIDER, 2011. Electronic structure of EuO spin filter tunnel contacts directly on silicon. In: Physica Status Solidi (RRL) - Rapid Research Letters. Wiley. 2011, 5(12), pp. 441-443. ISSN 1862-6254. eISSN 1862-6270. Available under: doi: 10.1002/pssr.201105403BibTex
@article{Caspers2011-12Elect-49769, year={2011}, doi={10.1002/pssr.201105403}, title={Electronic structure of EuO spin filter tunnel contacts directly on silicon}, number={12}, volume={5}, issn={1862-6254}, journal={Physica Status Solidi (RRL) - Rapid Research Letters}, pages={441--443}, author={Caspers, Christian and Müller, Martina and Gray, Alexander X. and Kaiser, Alexander M. and Gloskovskii, Andrei and Fadley, Charles S. and Drube, Wolfgang and Schneider, Claus M.} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/49769"> <dc:creator>Fadley, Charles S.</dc:creator> <dc:contributor>Gloskovskii, Andrei</dc:contributor> <dc:creator>Caspers, Christian</dc:creator> <dc:creator>Gray, Alexander X.</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:contributor>Müller, Martina</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2020-06-02T08:40:23Z</dc:date> <dc:language>eng</dc:language> <dcterms:title>Electronic structure of EuO spin filter tunnel contacts directly on silicon</dcterms:title> <dc:creator>Kaiser, Alexander M.</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:contributor>Schneider, Claus M.</dc:contributor> <dc:contributor>Drube, Wolfgang</dc:contributor> <dc:contributor>Gray, Alexander X.</dc:contributor> <dc:creator>Schneider, Claus M.</dc:creator> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/49769"/> <dc:rights>terms-of-use</dc:rights> <dc:contributor>Caspers, Christian</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2020-06-02T08:40:23Z</dcterms:available> <dcterms:abstract xml:lang="eng">We present an electronic structure study of a magnetic oxide/ semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon‐based spintronics devices. A combined electronic structure analysis of Eu core levels and valence bands using hard X‐ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO “spin filter” tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices. Hard X‐ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface.</dcterms:abstract> <dc:creator>Müller, Martina</dc:creator> <dcterms:issued>2011-12</dcterms:issued> <dc:contributor>Kaiser, Alexander M.</dc:contributor> <dc:creator>Drube, Wolfgang</dc:creator> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dc:contributor>Fadley, Charles S.</dc:contributor> <dc:creator>Gloskovskii, Andrei</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> </rdf:Description> </rdf:RDF>