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Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design

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2020

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Baumgarten, Lutz
Mittmann, Terence
Matveyev, Yury
Schlueter, Christoph
Mikolajick, Thomas
Schroeder, Uwe

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https://doi.org/10.1021/acsaelm.0c00503
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ACS Applied Electronic Materials. ACS Publications. 2020, 2(10), pp. 3152-3159. eISSN 2637-6113. Available under: doi: 10.1021/acsaelm.0c00503

Zusammenfassung

The interface formation between ferroelectric HfO2 layers and TiN bottom electrodes was studied by hard X-ray photoelectron spectroscopy and directly correlated to the electric polarization characteristics of the TiN/HfO2/TiN capacitors. We consistently deduced the interface chemistry from HfO2- and TiN-related core levels, dependent on the oxygen flow ṁ supplied before and during physical vapor deposition (PVD) growth of HfO2. The results underline the critical, twofold impact of oxygen supply on HfO2 and interface properties. When supplied before growth, the supplied oxygen stabilizes the TiN/HfO2 interface by oxidation and formation of a self-limiting (noninsulating) TiO2 intralayer. When supplied during growth, on the other hand, oxygen flows above a critical threshold reduce the oxygen vacancy concentration within the HfO2 film. We reveal a direct relation between the maximum ferroelectric remanent polarization and a critical threshold PVD oxygen exposure flow rate. The results allow for advancement of the PVD growth process in terms of a more flexible design of the ferroelectric HfO2 films with chemically stable TiN interfaces.

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ISO 690SZYJKA, Thomas, Lutz BAUMGARTEN, Terence MITTMANN, Yury MATVEYEV, Christoph SCHLUETER, Thomas MIKOLAJICK, Uwe SCHROEDER, Martina MÜLLER, 2020. Enhanced Ferroelectric Polarization in TiN/HfO2/TiN Capacitors by Interface Design. In: ACS Applied Electronic Materials. ACS Publications. 2020, 2(10), pp. 3152-3159. eISSN 2637-6113. Available under: doi: 10.1021/acsaelm.0c00503
BibTex
@article{Szyjka2020Enhan-52382,
  year={2020},
  doi={10.1021/acsaelm.0c00503},
  title={Enhanced Ferroelectric Polarization in TiN/HfO<sub>2</sub>/TiN Capacitors by Interface Design},
  number={10},
  volume={2},
  journal={ACS Applied Electronic Materials},
  pages={3152--3159},
  author={Szyjka, Thomas and Baumgarten, Lutz and Mittmann, Terence and Matveyev, Yury and Schlueter, Christoph and Mikolajick, Thomas and Schroeder, Uwe and Müller, Martina}
}
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    <dcterms:abstract xml:lang="eng">The interface formation between ferroelectric HfO&lt;sub&gt;2&lt;/sub&gt; layers and TiN bottom electrodes was studied by hard X-ray photoelectron spectroscopy and directly correlated to the electric polarization characteristics of the TiN/HfO&lt;sub&gt;2&lt;/sub&gt;/TiN capacitors. We consistently deduced the interface chemistry from HfO&lt;sub&gt;2&lt;/sub&gt;- and TiN-related core levels, dependent on the oxygen flow ṁ supplied before and during physical vapor deposition (PVD) growth of HfO&lt;sub&gt;2&lt;/sub&gt;. The results underline the critical, twofold impact of oxygen supply on HfO&lt;sub&gt;2&lt;/sub&gt; and interface properties. When supplied before growth, the supplied oxygen stabilizes the TiN/HfO&lt;sub&gt;2&lt;/sub&gt; interface by oxidation and formation of a self-limiting (noninsulating) TiO&lt;sub&gt;2&lt;/sub&gt; intralayer. When supplied during growth, on the other hand, oxygen flows above a critical threshold reduce the oxygen vacancy concentration within the HfO&lt;sub&gt;2&lt;/sub&gt; film. We reveal a direct relation between the maximum ferroelectric remanent polarization and a critical threshold PVD oxygen exposure flow rate. The results allow for advancement of the PVD growth process in terms of a more flexible design of the ferroelectric HfO&lt;sub&gt;2&lt;/sub&gt; films with chemically stable TiN interfaces.</dcterms:abstract>
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