Publikation: Reducing LeTID with an Adjustment of the AlOx-SiNy:H layer system
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2020
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37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings. München: WIP, 2020, pp. 156-159. eISSN 2196-100X. ISBN 3-936338-73-6
Zusammenfassung
Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and electronic characteristics of silicon (Si) solar cells. Even though the exact underlying mechanism of LeTID and subsequent regeneration are still unknown, LeTID formation seems to depend on the hydrogen content in the Si bulk. In this study, we compare the LeTID and subsequent regeneration behaviour of p-type Cz-Si and mc-Si samples with different AlOx/SiNy:H passivation layer systems under illumination (1 sun) and elevated temperature (130°C). Provided that atomic layer deposited AlOx can serve as diffusion barrier for hydrogen diffusing in the Si bulk from the SiNy:H layer during firing, we are able to change the hydrogen content by adjusting the AlOx layer thickness between 0 and 25 nm. Thus, we are able to show a reduction of LeTID by an adapted processing sequence without any losses in material quality.
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530 Physik
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37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) (online), 7. Sept. 2020 - 11. Sept. 2020
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SCHMID, Andreas, Christian FISCHER, Daniel SKORKA, Annika ZUSCHLAG, Giso HAHN, 2020. Reducing LeTID with an Adjustment of the AlOx-SiNy:H layer system. 37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) (online), 7. Sept. 2020 - 11. Sept. 2020. In: 37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings. München: WIP, 2020, pp. 156-159. eISSN 2196-100X. ISBN 3-936338-73-6BibTex
@inproceedings{Schmid2020Reduc-51692,
year={2020},
title={Reducing LeTID with an Adjustment of the AlO<sub>x</sub>-SiN<sub>y</sub>:H layer system},
url={https://www.eupvsec-proceedings.com/proceedings?fulltext=hahn&paper=49208},
isbn={3-936338-73-6},
publisher={WIP},
address={München},
booktitle={37th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) : Proceedings},
pages={156--159},
author={Schmid, Andreas and Fischer, Christian and Skorka, Daniel and Zuschlag, Annika and Hahn, Giso}
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<dcterms:abstract xml:lang="eng">Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and electronic characteristics of silicon (Si) solar cells. Even though the exact underlying mechanism of LeTID and subsequent regeneration are still unknown, LeTID formation seems to depend on the hydrogen content in the Si bulk. In this study, we compare the LeTID and subsequent regeneration behaviour of p-type Cz-Si and mc-Si samples with different AlOx/SiNy:H passivation layer systems under illumination (1 sun) and elevated temperature (130°C). Provided that atomic layer deposited AlOx can serve as diffusion barrier for hydrogen diffusing in the Si bulk from the SiNy:H layer during firing, we are able to change the hydrogen content by adjusting the AlOx layer thickness between 0 and 25 nm. Thus, we are able to show a reduction of LeTID by an adapted processing sequence without any losses in material quality.</dcterms:abstract>
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2020-11-06
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