Self-assembled monolayer field-effect transistors based on oligo-9,9′-dioctylfluorene phosphonic acids

Gothe, Bastian; de Roo, Tjaard; Will, Johannes; Unruh, Tobias; Mecking, Stefan; Halik, Marcus

Self-assembled monolayer field-effect transistors based on oligo-9,9′-dioctylfluorene phosphonic acids

Dateien

Gothe_2-1403rud9852dc2.pdfGröße: 274.5 KBDownloads: 384

Datum

2017

Autor:innen

Gothe, Bastian

de Roo, Tjaard

Will, Johannes

Unruh, Tobias

Mecking, Stefan

Halik, Marcus

Open Access-Veröffentlichung

Open Access Green

Sammlungen

Chemie

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Nanoscale. 2017, 9(47), pp. 18584-18589. ISSN 2040-3364. eISSN 2040-3372. Available under: doi: 10.1039/C7NR06090D

Zusammenfassung

The use of functional oligomers of π-conjugated oligofluorenes led to a region-selective assembly of amorphous monolayers which exhibit robust lateral charge transport pathways in selfassembled monolayer field-effect transistors over long distances and even in mixed monolayers of semiconducting and insulating molecules. This oligomer concept might stimulate a new molecular design of self-assembling semiconducting materials.

Fachgebiet (DDC)

540 Chemie

Zitieren

ISO 690

GOTHE, Bastian, Tjaard DE ROO, Johannes WILL, Tobias UNRUH, Stefan MECKING, Marcus HALIK, 2017. Self-assembled monolayer field-effect transistors based on oligo-9,9′-dioctylfluorene phosphonic acids. In: Nanoscale. 2017, 9(47), pp. 18584-18589. ISSN 2040-3364. eISSN 2040-3372. Available under: doi: 10.1039/C7NR06090D

BibTex

@article{Gothe2017Selfa-41309,
  year={2017},
  doi={10.1039/C7NR06090D},
  title={Self-assembled monolayer field-effect transistors based on oligo-9,9′-dioctylfluorene phosphonic acids},
  number={47},
  volume={9},
  issn={2040-3364},
  journal={Nanoscale},
  pages={18584--18589},
  author={Gothe, Bastian and de Roo, Tjaard and Will, Johannes and Unruh, Tobias and Mecking, Stefan and Halik, Marcus}
}

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