Degradation und Regeneration Analysis in mc-Si

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dc.contributor.authorZuschlag, Annika
dc.contributor.authorSkorka, Daniel
dc.contributor.authorHahn, Giso
dc.date.accessioned2016-12-15T15:47:21Z
dc.date.available2016-12-15T15:47:21Z
dc.date.issued2016eng
dc.description.abstractThe performance of mc-Si PERC solar cells can be significantly affected by LeTID. The underlying mechanism causing LeTID is still unknown. This work compares the degradation and regeneration behavior under illumination and elevated temperature of an industrial mc-Si PERC solar cell to differently processed minority charge carrier lifetime samples. A strong degradation and also regeneration can be observed on lifetime level. Degradation and regeneration are strongly influenced by the applied process steps, like gettering, temperature load and surface passivation method. Therefore, lifetime studies offer a valuable possibility to identify further parameters influencing LeTID.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1109/PVSC.2016.7749772eng
dc.identifier.ppn481027041
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/36339
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subjectsilicon, degradation, LeTID, multicrystalline, regenerationeng
dc.subject.ddc530eng
dc.titleDegradation und Regeneration Analysis in mc-Sieng
dc.typeINPROCEEDINGSeng
dspace.entity.typePublication
kops.citation.bibtex
@inproceedings{Zuschlag2016Degra-36339,
  year={2016},
  doi={10.1109/PVSC.2016.7749772},
  title={Degradation und Regeneration Analysis in mc-Si},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={Proceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)},
  pages={1051--1054},
  author={Zuschlag, Annika and Skorka, Daniel and Hahn, Giso}
}
kops.citation.iso690ZUSCHLAG, Annika, Daniel SKORKA, Giso HAHN, 2016. Degradation und Regeneration Analysis in mc-Si. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Portland, OR, 5. Juni 2016 - 10. Juni 2016. In: Proceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2016, pp. 1051-1054. Available under: doi: 10.1109/PVSC.2016.7749772deu
kops.citation.iso690ZUSCHLAG, Annika, Daniel SKORKA, Giso HAHN, 2016. Degradation und Regeneration Analysis in mc-Si. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Portland, OR, Jun 5, 2016 - Jun 10, 2016. In: Proceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2016, pp. 1051-1054. Available under: doi: 10.1109/PVSC.2016.7749772eng
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kops.conferencefield2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5. Juni 2016 - 10. Juni 2016, Portland, ORdeu
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kops.sourcefield.plainProceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2016, pp. 1051-1054. Available under: doi: 10.1109/PVSC.2016.7749772eng
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source.titleProceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)eng

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