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Degradation und Regeneration Analysis in mc-Si

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Zuschlag_0-374359.pdf
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2016

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Proceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2016, pp. 1051-1054. Available under: doi: 10.1109/PVSC.2016.7749772

Zusammenfassung

The performance of mc-Si PERC solar cells can be significantly affected by LeTID. The underlying mechanism causing LeTID is still unknown. This work compares the degradation and regeneration behavior under illumination and elevated temperature of an industrial mc-Si PERC solar cell to differently processed minority charge carrier lifetime samples. A strong degradation and also regeneration can be observed on lifetime level. Degradation and regeneration are strongly influenced by the applied process steps, like gettering, temperature load and surface passivation method. Therefore, lifetime studies offer a valuable possibility to identify further parameters influencing LeTID.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

silicon, degradation, LeTID, multicrystalline, regeneration

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2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 5. Juni 2016 - 10. Juni 2016, Portland, OR
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ISO 690ZUSCHLAG, Annika, Daniel SKORKA, Giso HAHN, 2016. Degradation und Regeneration Analysis in mc-Si. 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Portland, OR, 5. Juni 2016 - 10. Juni 2016. In: Proceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: IEEE, 2016, pp. 1051-1054. Available under: doi: 10.1109/PVSC.2016.7749772
BibTex
@inproceedings{Zuschlag2016Degra-36339,
  year={2016},
  doi={10.1109/PVSC.2016.7749772},
  title={Degradation und Regeneration Analysis in mc-Si},
  publisher={IEEE},
  address={Piscataway, NJ},
  booktitle={Proceedings of 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)},
  pages={1051--1054},
  author={Zuschlag, Annika and Skorka, Daniel and Hahn, Giso}
}
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