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High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates

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2022

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https://doi.org/10.1103/PhysRevB.105.L121402
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http://arxiv.org/abs/2112.11304

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Physical Review B. American Physical Society (APS). 2022, 105(12), L121402. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.105.L121402

Zusammenfassung

Recent experiments have demonstrated two-qubit gate fidelities above 99% for semiconductor spin qubits. However, theoretically, the fidelity of controlled-not (cnot) operations is limited by off-resonant driving described by off-diagonal terms in the system Hamiltonian. Here, we investigate these off-diagonal contributions and we propose a fidelity improvement of several orders of magnitude by using asymmetric driving. Therefore, we provide a description of ac virtual gates based on a simple capacitance model which not only enables a high-fidelity cnot but also allows for crosstalk reduction when scaling up spin qubit devices to larger arrays.

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ISO 690HEINZ, Irina, Guido BURKARD, 2022. High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates. In: Physical Review B. American Physical Society (APS). 2022, 105(12), L121402. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.105.L121402
BibTex
@article{Heinz2022Highf-56956,
  year={2022},
  doi={10.1103/PhysRevB.105.L121402},
  title={High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates},
  number={12},
  volume={105},
  issn={2469-9950},
  journal={Physical Review B},
  author={Heinz, Irina and Burkard, Guido},
  note={Article Number: L121402}
}
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