Publikation: High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates
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2022
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Physical Review B. American Physical Society (APS). 2022, 105(12), L121402. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.105.L121402
Zusammenfassung
Recent experiments have demonstrated two-qubit gate fidelities above 99% for semiconductor spin qubits. However, theoretically, the fidelity of controlled-not (cnot) operations is limited by off-resonant driving described by off-diagonal terms in the system Hamiltonian. Here, we investigate these off-diagonal contributions and we propose a fidelity improvement of several orders of magnitude by using asymmetric driving. Therefore, we provide a description of ac virtual gates based on a simple capacitance model which not only enables a high-fidelity cnot but also allows for crosstalk reduction when scaling up spin qubit devices to larger arrays.
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HEINZ, Irina, Guido BURKARD, 2022. High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates. In: Physical Review B. American Physical Society (APS). 2022, 105(12), L121402. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.105.L121402BibTex
@article{Heinz2022Highf-56956, year={2022}, doi={10.1103/PhysRevB.105.L121402}, title={High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates}, number={12}, volume={105}, issn={2469-9950}, journal={Physical Review B}, author={Heinz, Irina and Burkard, Guido}, note={Article Number: L121402} }
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