Publikation:

Nuclear Spin Quantum Memory in Silicon Carbide

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2022

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Trupke, Michael
Koller, Philipp
Astner, Thomas

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European Union (EU): 862721

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QuanTELCO
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Physical Review Research. American Physical Society. 2022, 4(3), 033107. eISSN 2643-1564. Available under: doi: 10.1103/PhysRevResearch.4.033107

Zusammenfassung

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology. Some TM defects, e.g. vanadium, emit in one of the telecom bands, but the large ground state hyperfine manifold poses a problem for applications which require pure quantum states. We develop a driven, dissipative protocol to polarize the nuclear spin, based on a rigorous theoretical model of the defect. We further show that nuclear-spin polarization enables the use of well-known methods for initialization and long-time coherent storage of quantum states. The proposed nuclear-spin preparation protocol thus marks the first step towards an all-optically controlled integrated platform for quantum technology with TM defects in SiC.

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530 Physik

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ISO 690TISSOT, Benedikt, Michael TRUPKE, Philipp KOLLER, Thomas ASTNER, Guido BURKARD, 2022. Nuclear Spin Quantum Memory in Silicon Carbide. In: Physical Review Research. American Physical Society. 2022, 4(3), 033107. eISSN 2643-1564. Available under: doi: 10.1103/PhysRevResearch.4.033107
BibTex
@article{Tissot2022-04-20T08:23:26ZNucle-58282,
  year={2022},
  doi={10.1103/PhysRevResearch.4.033107},
  title={Nuclear Spin Quantum Memory in Silicon Carbide},
  number={3},
  volume={4},
  journal={Physical Review Research},
  author={Tissot, Benedikt and Trupke, Michael and Koller, Philipp and Astner, Thomas and Burkard, Guido},
  note={Article Number: 033107}
}
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