Publikation: Progress on the LOPE (local point contact and shallow angle evaporation) silicon solar cell
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The LOPE-Solar cell concept is based on a V-textured front surface with local point contacts which are interconnected by the SAFE (shallow angle finger evaporation) technique after a heavy phosphorus diffusion. Three dimensional computer simulations were carried out to examine the influence of the point contact distance parallel and perpendicular to the V-grooves. Additionally two different emitters, two different sheet resistances under the metal contact and a small and a larger contact area were investigated. A plating sequence for Ni-plating has been successfully implemented in the LOPE-cell process to complete the metallisation of the local openings. A detailed characterisation of the LOPE-cell is presented.
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TERHEIDEN, Barbara, Ruediger KUHN, Christoph ZECHNER, Peter FATH, Gerd WILLEKE, Ernst BUCHER, 1997. Progress on the LOPE (local point contact and shallow angle evaporation) silicon solar cell. 26th IEEE Photovoltaic Specialists Conference. Anaheim, 29. Sept. 1997 - 3. Okt. 1997. In: IEEE, , ed.. Conference record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 : Anaheim Marriott, Anaheim, CA, 29 September - 03 October 1997. Piscataway, NJ: IEEE Service Center, 1997, pp. 239-242. ISSN 0160-8371. ISBN 0-7803-3767-0. Available under: doi: 10.1109/PVSC.1997.654073BibTex
@inproceedings{Terheiden1997Progr-31678, year={1997}, doi={10.1109/PVSC.1997.654073}, title={Progress on the LOPE (local point contact and shallow angle evaporation) silicon solar cell}, isbn={0-7803-3767-0}, issn={0160-8371}, publisher={IEEE Service Center}, address={Piscataway, NJ}, booktitle={Conference record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 : Anaheim Marriott, Anaheim, CA, 29 September - 03 October 1997}, pages={239--242}, editor={IEEE}, author={Terheiden, Barbara and Kuhn, Ruediger and Zechner, Christoph and Fath, Peter and Willeke, Gerd and Bucher, Ernst} }
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