Publikation:

Charge-induced ripplon softening and dimple crystallization at the interface of 3He-4He mixtures

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020_physrevlett_1979.pdf
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1979

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Wanner, Manfred

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http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-29126
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https://doi.org/10.1103/PhysRevLett.42.315
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Attribution-NonCommercial-NoDerivs 2.0 Generic

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Physik: Publikationen
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Published

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Physical Review Letters. 1979, 42(5), pp. 315-317. Available under: doi: 10.1103/PhysRevLett.42.315

Zusammenfassung

The interface of phase-separated 3He-4He mixtures, when charged with negative ions, shows a pronounced softening of its ripplon spectrum at wave vectors around the inverse capillary length. As the electrical field perpendicular to the interface is increased beyond a value Ec where the frequency of the soft ripplon vanishes, a phase transition to a spontaneous deformation of the interface in the form of an ordered array of dimples is observed.

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530 Physik

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ISO 690WANNER, Manfred, Paul LEIDERER, 1979. Charge-induced ripplon softening and dimple crystallization at the interface of 3He-4He mixtures. In: Physical Review Letters. 1979, 42(5), pp. 315-317. Available under: doi: 10.1103/PhysRevLett.42.315
BibTex
@article{Wanner1979Charg-4740,
  year={1979},
  doi={10.1103/PhysRevLett.42.315},
  title={Charge-induced ripplon softening and dimple crystallization at the interface of 3He-4He mixtures},
  number={5},
  volume={42},
  journal={Physical Review Letters},
  pages={315--317},
  author={Wanner, Manfred and Leiderer, Paul}
}
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