Publikation: Effective time-reversal symmetry breaking in the spin relaxation in a graphene quantum dot
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We study the relaxation of a single electron spin in a circular gate-tunable quantum dot in gapped graphene. Direct coupling of the electron spin to out-of-plane phonons via the intrinsic spin-orbit coupling leads to a relaxation time T1 which is independent of the B field at low fields. We also find that Rashba spin-orbit induced admixture of opposite spin states in combination with the emission of in-plane phonons provides various further relaxation channels via deformation potential and bond-length change. In the absence of valley mixing, spin relaxation takes place within each valley separately and thus time-reversal symmetry is effectively broken, therefore inhibiting the Van Vleck cancellation at B=0 known from GaAs quantum dots. Both the absence of the Van Vleck cancellation as well as the out-of-plane phonons lead to a behavior of the spin-relaxation rate at low magnetic fields which is markedly different from the known results for GaAs. For low-B fields, we find that the rate is constant in B and then crosses over to ∝B2 or ∝B4 at higher fields.
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STRUCK, Philipp, Guido BURKARD, 2010. Effective time-reversal symmetry breaking in the spin relaxation in a graphene quantum dot. In: Physical Review B. 2010, 82(12). ISSN 1098-0121. Available under: doi: 10.1103/PhysRevB.82.125401BibTex
@article{Struck2010Effec-12444,
year={2010},
doi={10.1103/PhysRevB.82.125401},
title={Effective time-reversal symmetry breaking in the spin relaxation in a graphene quantum dot},
number={12},
volume={82},
issn={1098-0121},
journal={Physical Review B},
author={Struck, Philipp and Burkard, Guido}
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<dcterms:abstract xml:lang="eng">We study the relaxation of a single electron spin in a circular gate-tunable quantum dot in gapped graphene. Direct coupling of the electron spin to out-of-plane phonons via the intrinsic spin-orbit coupling leads to a relaxation time T1 which is independent of the B field at low fields. We also find that Rashba spin-orbit induced admixture of opposite spin states in combination with the emission of in-plane phonons provides various further relaxation channels via deformation potential and bond-length change. In the absence of valley mixing, spin relaxation takes place within each valley separately and thus time-reversal symmetry is effectively broken, therefore inhibiting the Van Vleck cancellation at B=0 known from GaAs quantum dots. Both the absence of the Van Vleck cancellation as well as the out-of-plane phonons lead to a behavior of the spin-relaxation rate at low magnetic fields which is markedly different from the known results for GaAs. For low-B fields, we find that the rate is constant in B and then crosses over to ∝B2 or ∝B4 at higher fields.</dcterms:abstract>
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