Publikation: Firing and gettering dependence of effective defect density in material exhibiting LeTID
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2018
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BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 130015. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049334
Zusammenfassung
The investigation of LeTID effects in mc-Si material requires repeated measurements of the minority charge carrier lifetime τeff. Due to the inhomogeneous nature of mc-Si, measurements of τeff should be carried out in a spatially resolved way. In this work, we show results for the impact of firing and gettering on LeTID in high quality mc-Si material and analyse them in terms of the effective defect density Neff while retaining the spatial information. We show that especially for low peak firing temperature degradation is not homogeneous and that firing and gettering influence the degree of spatial inhomogeneity.
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530 Physik
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SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics, 19. März 2018 - 21. März 2018, Lausanne
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SKORKA, Daniel, Annika ZUSCHLAG, Giso HAHN, 2018. Firing and gettering dependence of effective defect density in material exhibiting LeTID. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. März 2018 - 21. März 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 130015. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049334BibTex
@inproceedings{Skorka2018Firin-43641,
year={2018},
doi={10.1063/1.5049334},
title={Firing and gettering dependence of effective defect density in material exhibiting LeTID},
number={1999,1},
isbn={978-0-7354-1715-1},
issn={0094-243X},
publisher={AIP Publishing},
address={Melville, NY},
series={AIP Conference Proceedings},
booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics},
editor={Ballif, Christophe},
author={Skorka, Daniel and Zuschlag, Annika and Hahn, Giso},
note={Article Number: 130015}
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<dcterms:abstract xml:lang="eng">The investigation of LeTID effects in mc-Si material requires repeated measurements of the minority charge carrier lifetime τ<sub>eff</sub>. Due to the inhomogeneous nature of mc-Si, measurements of τ<sub>eff</sub> should be carried out in a spatially resolved way. In this work, we show results for the impact of firing and gettering on LeTID in high quality mc-Si material and analyse them in terms of the effective defect density N<sub>eff</sub> while retaining the spatial information. We show that especially for low peak firing temperature degradation is not homogeneous and that firing and gettering influence the degree of spatial inhomogeneity.</dcterms:abstract>
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