Publikation: Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes
Lade...
Dateien
Datum
2003
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published
Erschienen in
Applied Physics Letters. 2003, 83(19), pp. 3885-3887. Available under: doi: 10.1063/1.1626809
Zusammenfassung
Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the total intensity with increasing temperature. The implantation dose and temperature dependences of the relative peak intensities provide evidence for the relevance of excitonic traps as a supply for free electron-hole pairs and thus for the origin of the enhanced electroluminescence at elevated temperatures.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Konferenz
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690
SUN, Jiaming, Thomas DEKORSY, Wolfgang SKORUPA, Bernd SCHMIDT, Manfred HELM, 2003. Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes. In: Applied Physics Letters. 2003, 83(19), pp. 3885-3887. Available under: doi: 10.1063/1.1626809BibTex
@article{Sun2003Origi-9507,
year={2003},
doi={10.1063/1.1626809},
title={Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes},
number={19},
volume={83},
journal={Applied Physics Letters},
pages={3885--3887},
author={Sun, Jiaming and Dekorsy, Thomas and Skorupa, Wolfgang and Schmidt, Bernd and Helm, Manfred}
}RDF
<rdf:RDF
xmlns:dcterms="http://purl.org/dc/terms/"
xmlns:dc="http://purl.org/dc/elements/1.1/"
xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
xmlns:bibo="http://purl.org/ontology/bibo/"
xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
xmlns:foaf="http://xmlns.com/foaf/0.1/"
xmlns:void="http://rdfs.org/ns/void#"
xmlns:xsd="http://www.w3.org/2001/XMLSchema#" >
<rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9507">
<dcterms:issued>2003</dcterms:issued>
<dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9507/1/Origin_of_anomalous_temperature_dependence_and_high_efficiency_of_silicon_light_emitting_diodes.pdf"/>
<dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:33Z</dcterms:available>
<dcterms:abstract xml:lang="eng">Efficient electroluminescence with power efficiency up to 0.12% is observed from silicon pn diodes prepared by boron implantation with boron concentrations above the solubility limit at the postimplantation annealing temperature. The electroluminescence spectra exhibit a transition from two bound-exciton bands towards the free electron-hole pair recombination with an anomalous increase in the total intensity with increasing temperature. The implantation dose and temperature dependences of the relative peak intensities provide evidence for the relevance of excitonic traps as a supply for free electron-hole pairs and thus for the origin of the enhanced electroluminescence at elevated temperatures.</dcterms:abstract>
<dc:contributor>Sun, Jiaming</dc:contributor>
<dcterms:title>Origin of anomalous temperature dependence and high efficiency of silicon light-emitting diodes</dcterms:title>
<dcterms:bibliographicCitation>First publ. in: Applied Physics Letters 83 (2003), 19, pp. 3885-3887</dcterms:bibliographicCitation>
<dc:creator>Sun, Jiaming</dc:creator>
<void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
<dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
<dc:creator>Schmidt, Bernd</dc:creator>
<dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
<dc:creator>Skorupa, Wolfgang</dc:creator>
<dc:contributor>Skorupa, Wolfgang</dc:contributor>
<dc:creator>Dekorsy, Thomas</dc:creator>
<dc:contributor>Dekorsy, Thomas</dc:contributor>
<dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:57:33Z</dc:date>
<dc:format>application/pdf</dc:format>
<dc:creator>Helm, Manfred</dc:creator>
<foaf:homepage rdf:resource="http://localhost:8080/"/>
<bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9507"/>
<dc:language>eng</dc:language>
<dc:contributor>Schmidt, Bernd</dc:contributor>
<dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
<dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9507/1/Origin_of_anomalous_temperature_dependence_and_high_efficiency_of_silicon_light_emitting_diodes.pdf"/>
<dc:contributor>Helm, Manfred</dc:contributor>
<dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
</rdf:Description>
</rdf:RDF>Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Nein
