Publikation: Acceptor-Hydrogen pairs and their effect on light- and elevated temperature-induced degradation in crystalline Silicon
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Silicon-based photovoltaics play a critical role in generating renewable electricity. However, a reduction in solar cell efficiency due to Light- and elevated Temperature-induced degradation (LeTID) results in higher electricity production costs, creating hurdles for the implementation of renewable energies in the power grid. Understanding the fundamental mechanism of LeTID is essential for preventing it. There is clear evidence for an association of LeTID with hydrogen in p-type silicon introduced into the bulk during cell manufacturing. In order to measure hydrogen concentrations within the range of 1014–1015 cm−3, this work utilizes acceptor-hydrogen pairing. Therefore, the dynamics of formation and dissociation of these pairs are investigated under varying conditions first. The acceptor elements including boron, aluminum, and gallium exhibit distinct kinetics in pairing with hydrogen. The concentration of pairs is deduced from the change in resistivity caused by pair formation. Direct evidence of acceptor-hydrogen pairs is provided by infrared spectroscopy. The determination of calibration factors between the infrared absorption and the acceptor-hydrogen pair concentration allows for a simple measurement of the absolute concentration of this hydrogen species in silicon. Both techniques offer versatile methods for detecting hydrogen in p-type silicon down to 1013 cm−3. They are utilized to examine the amount of hydrogen introduced during a firing process of SiNx:H coated samples. It turned out that the total hydrogen concentration is influenced by both the maximum temperature and the cooling rate. The measurement of the hydrogen dimer H2, BH, AlH, and GaH is used to establish a quantitative correlation between hydrogen and the concentration of LeTID defects. The defect concentration exhibits direct proportionality with the concentration of H2. In contrast, acceptor-hydrogen pairs do not contribute to the formation of defects, as demonstrated by comparing the dynamics of defects and pairs under iso-injective illumination. The findings of this work allow for the conclusion, that LeTID can be prevented by decreasing the amount of hydrogen introduced during the production of solar cells. In addition, the linear correlation with H2 and the comparison of the dynamics with acceptor-hydrogen pairs set requirements for the underlying defect model.
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SIMON, Jochen, 2024. Acceptor-Hydrogen pairs and their effect on light- and elevated temperature-induced degradation in crystalline Silicon [Dissertation]. Konstanz: University of KonstanzBibTex
@phdthesis{Simon2024-02-29Accep-69437, year={2024}, title={Acceptor-Hydrogen pairs and their effect on light- and elevated temperature-induced degradation in crystalline Silicon}, author={Simon, Jochen}, address={Konstanz}, school={Universität Konstanz} }
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<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/69437"> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dcterms:title>Acceptor-Hydrogen pairs and their effect on light- and elevated temperature-induced degradation in crystalline Silicon</dcterms:title> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/69437/4/Simon-2-19awryawyt3yz8.pdf"/> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/69437"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/69437/4/Simon-2-19awryawyt3yz8.pdf"/> <dc:rights>terms-of-use</dc:rights> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2024-02-29T12:42:46Z</dc:date> <dcterms:issued>2024-02-29</dcterms:issued> <dc:language>eng</dc:language> <dcterms:abstract>Silicon-based photovoltaics play a critical role in generating renewable electricity. However, a reduction in solar cell efficiency due to Light- and elevated Temperature-induced degradation (LeTID) results in higher electricity production costs, creating hurdles for the implementation of renewable energies in the power grid. Understanding the fundamental mechanism of LeTID is essential for preventing it. There is clear evidence for an association of LeTID with hydrogen in p-type silicon introduced into the bulk during cell manufacturing. In order to measure hydrogen concentrations within the range of 10<sup>14</sup>–10<sup>15</sup> cm<sup>−3</sup>, this work utilizes acceptor-hydrogen pairing. Therefore, the dynamics of formation and dissociation of these pairs are investigated under varying conditions first. The acceptor elements including boron, aluminum, and gallium exhibit distinct kinetics in pairing with hydrogen. The concentration of pairs is deduced from the change in resistivity caused by pair formation. Direct evidence of acceptor-hydrogen pairs is provided by infrared spectroscopy. The determination of calibration factors between the infrared absorption and the acceptor-hydrogen pair concentration allows for a simple measurement of the absolute concentration of this hydrogen species in silicon. Both techniques offer versatile methods for detecting hydrogen in p-type silicon down to 10<sup>13</sup> cm<sup>−3</sup>. They are utilized to examine the amount of hydrogen introduced during a firing process of SiN<sub>x</sub>:H coated samples. It turned out that the total hydrogen concentration is influenced by both the maximum temperature and the cooling rate. The measurement of the hydrogen dimer H<sub>2</sub>, BH, AlH, and GaH is used to establish a quantitative correlation between hydrogen and the concentration of LeTID defects. The defect concentration exhibits direct proportionality with the concentration of H<sub>2</sub>. In contrast, acceptor-hydrogen pairs do not contribute to the formation of defects, as demonstrated by comparing the dynamics of defects and pairs under iso-injective illumination. The findings of this work allow for the conclusion, that LeTID can be prevented by decreasing the amount of hydrogen introduced during the production of solar cells. In addition, the linear correlation with H<sub>2</sub> and the comparison of the dynamics with acceptor-hydrogen pairs set requirements for the underlying defect model.</dcterms:abstract> <dc:contributor>Simon, Jochen</dc:contributor> <dc:creator>Simon, Jochen</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2024-02-29T12:42:46Z</dcterms:available> </rdf:Description> </rdf:RDF>