Publikation:

Strain engineering for transition-metal defects in SiC

Vorschaubild

Dateien

Zu diesem Dokument gibt es keine Dateien.

Datum

2024

Autor:innen

Udvarhelyi, PĂ©ter
Gali, Adam

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

URI (zitierfähiger Link)
DOI (zitierfähiger Link)
https://doi.org/10.1103/physrevb.109.054111
ArXiv-ID

Internationale Patentnummer

Angaben zur Forschungsförderung

Institutionen der Bundesrepublik Deutschland: 13N16212
European Union (EU): 862721
European Union (EU): 101046911

Projekt

Open Access-Veröffentlichung

Sammlungen

Physik: Publikationen
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published

Erschienen in

Physical Review B. American Physical Society (APS). 2024, 109(5), 054111. ISSN 2469-9950. eISSN 2469-9969. VerfĂĽgbar unter: doi: 10.1103/physrevb.109.054111

Zusammenfassung

Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g., vanadium (V), allow for optical emission in one of the telecom bands. For other defects, it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic-level structure and optical electric-dipole transitions of the V defect in SiC. In particular, we show how strain can be used to engineer the đť‘” tensor, electronic selection rules, and the hyperfine interaction. Based on these insights, we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Konferenz

Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690TISSOT, Benedikt, PĂ©ter UDVARHELYI, Adam GALI, Guido BURKARD, 2024. Strain engineering for transition-metal defects in SiC. In: Physical Review B. American Physical Society (APS). 2024, 109(5), 054111. ISSN 2469-9950. eISSN 2469-9969. VerfĂĽgbar unter: doi: 10.1103/physrevb.109.054111
BibTex
@article{Tissot2024-02-20Strai-71394,
  year={2024},
  doi={10.1103/physrevb.109.054111},
  title={Strain engineering for transition-metal defects in SiC},
  number={5},
  volume={109},
  issn={2469-9950},
  journal={Physical Review B},
  author={Tissot, Benedikt and Udvarhelyi, PĂ©ter and Gali, Adam and Burkard, Guido},
  note={Article Number: 054111}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/71394">
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Gali, Adam</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:language>eng</dc:language>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2024-11-22T08:15:07Z</dc:date>
    <dcterms:issued>2024-02-20</dcterms:issued>
    <dc:creator>Burkard, Guido</dc:creator>
    <dc:creator>Udvarhelyi, PĂ©ter</dc:creator>
    <dc:creator>Tissot, Benedikt</dc:creator>
    <dcterms:title>Strain engineering for transition-metal defects in SiC</dcterms:title>
    <dcterms:abstract>Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g., vanadium (V), allow for optical emission in one of the telecom bands. For other defects, it was shown that straining the crystal can lead to beneficial effects regarding the emission properties. Motivated by this, we theoretically study the main effects of strain on the electronic-level structure and optical electric-dipole transitions of the V defect in SiC. In particular, we show how strain can be used to engineer the đť‘” tensor, electronic selection rules, and the hyperfine interaction. Based on these insights, we discuss optical Lambda systems and a path forward to initializing the quantum state of strained TM defects in SiC.</dcterms:abstract>
    <dc:contributor>Gali, Adam</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Tissot, Benedikt</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2024-11-22T08:15:07Z</dcterms:available>
    <dc:contributor>Udvarhelyi, PĂ©ter</dc:contributor>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/71394"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Burkard, Guido</dc:contributor>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

PrĂĽfdatum der URL

PrĂĽfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Ja
Diese Publikation teilen