Publikation:

On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si

Vorschaubild

Dateien

Zu diesem Dokument gibt es keine Dateien.

Datum

2018

Autor:innen

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

URI (zitierfähiger Link)
DOI (zitierfähiger Link)
https://doi.org/10.1016/j.solmat.2018.05.031
ArXiv-ID

Internationale Patentnummer

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung

Sammlungen

Physik: Publikationen
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published

Erschienen in

Solar Energy Materials and Solar Cells. 2018, 185, pp. 277-282. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.05.031

Zusammenfassung

Different surface passivation approaches are applied on Cz-Si and FZ-Si samples and long-term stability is investigated during treatments at 60–80 °C and up to 1 sun equivalent illumination intensity. It is shown that SiNx:H and AlOx:H/SiNx:H surface passivation show a much more stable passivation quality when deposited on P-diffused and B-diffused surfaces, respectively. Long-term measurements lead to the conclusion that Cz-Si samples fired at measured peak temperatures up to 750 °C are very stable after regeneration of bulk defects. Samples fired at 850 °C show much stronger bulk-related degradation potentially linked to light and elevated temperature induced degradation (LeTID). Furthermore, Cz-Si samples fired at 850 °C express an instable behavior after a regeneration treatment.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Light induced degradation, Surface related degradation, Diffused silicon, Silicon nitride, Czochralski, related degradation

Konferenz

Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690SPERBER, David, Axel HERGUTH, Giso HAHN, 2018. On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si. In: Solar Energy Materials and Solar Cells. 2018, 185, pp. 277-282. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.05.031
BibTex
@article{Sperber2018-10impro-42905,
  year={2018},
  doi={10.1016/j.solmat.2018.05.031},
  title={On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si},
  volume={185},
  issn={0927-0248},
  journal={Solar Energy Materials and Solar Cells},
  pages={277--282},
  author={Sperber, David and Herguth, Axel and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/42905">
    <dcterms:abstract xml:lang="eng">Different surface passivation approaches are applied on Cz-Si and FZ-Si samples and long-term stability is investigated during treatments at 60–80 °C and up to 1 sun equivalent illumination intensity. It is shown that SiN&lt;sub&gt;x&lt;/sub&gt;:H and AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H surface passivation show a much more stable passivation quality when deposited on P-diffused and B-diffused surfaces, respectively. Long-term measurements lead to the conclusion that Cz-Si samples fired at measured peak temperatures up to 750 °C are very stable after regeneration of bulk defects. Samples fired at 850 °C show much stronger bulk-related degradation potentially linked to light and elevated temperature induced degradation (LeTID). Furthermore, Cz-Si samples fired at 850 °C express an instable behavior after a regeneration treatment.</dcterms:abstract>
    <dcterms:issued>2018-10</dcterms:issued>
    <dc:contributor>Sperber, David</dc:contributor>
    <dc:language>eng</dc:language>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Sperber, David</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-07-25T06:08:34Z</dc:date>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dcterms:title>On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si</dcterms:title>
    <dc:creator>Hahn, Giso</dc:creator>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-07-25T06:08:34Z</dcterms:available>
    <dc:creator>Herguth, Axel</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/42905"/>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

Prüfdatum der URL

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Unbekannt
Diese Publikation teilen