Publikation: On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si
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Different surface passivation approaches are applied on Cz-Si and FZ-Si samples and long-term stability is investigated during treatments at 60–80 °C and up to 1 sun equivalent illumination intensity. It is shown that SiNx:H and AlOx:H/SiNx:H surface passivation show a much more stable passivation quality when deposited on P-diffused and B-diffused surfaces, respectively. Long-term measurements lead to the conclusion that Cz-Si samples fired at measured peak temperatures up to 750 °C are very stable after regeneration of bulk defects. Samples fired at 850 °C show much stronger bulk-related degradation potentially linked to light and elevated temperature induced degradation (LeTID). Furthermore, Cz-Si samples fired at 850 °C express an instable behavior after a regeneration treatment.
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SPERBER, David, Axel HERGUTH, Giso HAHN, 2018. On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si. In: Solar Energy Materials and Solar Cells. 2018, 185, pp. 277-282. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2018.05.031BibTex
@article{Sperber2018-10impro-42905, year={2018}, doi={10.1016/j.solmat.2018.05.031}, title={On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si}, volume={185}, issn={0927-0248}, journal={Solar Energy Materials and Solar Cells}, pages={277--282}, author={Sperber, David and Herguth, Axel and Hahn, Giso} }
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