@article{Sperber2018-10impro-42905,
  year={2018},
  doi={10.1016/j.solmat.2018.05.031},
  title={On improved passivation stability on highly-doped crystalline silicon and the long-term stability of regenerated Cz-Si},
  volume={185},
  issn={0927-0248},
  journal={Solar Energy Materials and Solar Cells},
  pages={277--282},
  author={Sperber, David and Herguth, Axel and Hahn, Giso}
}

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    <dcterms:abstract xml:lang="eng">Different surface passivation approaches are applied on Cz-Si and FZ-Si samples and long-term stability is investigated during treatments at 60–80 °C and up to 1 sun equivalent illumination intensity. It is shown that SiN&lt;sub&gt;x&lt;/sub&gt;:H and AlO&lt;sub&gt;x&lt;/sub&gt;:H/SiN&lt;sub&gt;x&lt;/sub&gt;:H surface passivation show a much more stable passivation quality when deposited on P-diffused and B-diffused surfaces, respectively. Long-term measurements lead to the conclusion that Cz-Si samples fired at measured peak temperatures up to 750 °C are very stable after regeneration of bulk defects. Samples fired at 850 °C show much stronger bulk-related degradation potentially linked to light and elevated temperature induced degradation (LeTID). Furthermore, Cz-Si samples fired at 850 °C express an instable behavior after a regeneration treatment.</dcterms:abstract>
    <dcterms:issued>2018-10</dcterms:issued>
    <dc:contributor>Sperber, David</dc:contributor>
    <dc:language>eng</dc:language>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Sperber, David</dc:creator>
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