Publikation: Defect-related noise in AlN and AlGaN alloys
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Datum
2001
Autor:innen
Zeisel, Roland
Baldovino, Silvia
Ambacher, Oliver
Brandt, Martin S.
Stutzmann, Martin
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Physica B: Condensed Matter. Elsevier. 2001, 308-310, pp. 69-72. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/S0921-4526(01)00655-X
Zusammenfassung
The electronic noise properties of Si-doped AlN and Al0.3Ga0.7N are investigated. In AlN : Si, generation–recombination (g–r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX− ground state are quantitatively determined from the noise measurements. In Al0.3Ga0.7N:Si, in addition to 1/f noise, we find two g–r noise processes. However, an unambiguous identification of their origin proves to be difficult.
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Fachgebiet (DDC)
530 Physik
Schlagwörter
Electronic noise, DX-center, AlN, Group-III nitrides
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GOENNENWEIN, Sebastian T. B., Roland ZEISEL, Silvia BALDOVINO, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2001. Defect-related noise in AlN and AlGaN alloys. In: Physica B: Condensed Matter. Elsevier. 2001, 308-310, pp. 69-72. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/S0921-4526(01)00655-XBibTex
@article{Goennenwein2001Defec-53546, year={2001}, doi={10.1016/S0921-4526(01)00655-X}, title={Defect-related noise in AlN and AlGaN alloys}, volume={308-310}, issn={0921-4526}, journal={Physica B: Condensed Matter}, pages={69--72}, author={Goennenwein, Sebastian T. B. and Zeisel, Roland and Baldovino, Silvia and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin} }
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