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Defect-related noise in AlN and AlGaN alloys

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2001

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Zeisel, Roland
Baldovino, Silvia
Ambacher, Oliver
Brandt, Martin S.
Stutzmann, Martin

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https://doi.org/10.1016/S0921-4526(01)00655-X
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Physica B: Condensed Matter. Elsevier. 2001, 308-310, pp. 69-72. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/S0921-4526(01)00655-X

Zusammenfassung

The electronic noise properties of Si-doped AlN and Al0.3Ga0.7N are investigated. In AlN : Si, generation–recombination (g–r) noise is observed and shown to be linked to DX-centers. The potential energy barriers for capture into and emission from the DX− ground state are quantitatively determined from the noise measurements. In Al0.3Ga0.7N:Si, in addition to 1/f noise, we find two g–r noise processes. However, an unambiguous identification of their origin proves to be difficult.

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Fachgebiet (DDC)
530 Physik

Schlagwörter

Electronic noise, DX-center, AlN, Group-III nitrides

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ISO 690GOENNENWEIN, Sebastian T. B., Roland ZEISEL, Silvia BALDOVINO, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2001. Defect-related noise in AlN and AlGaN alloys. In: Physica B: Condensed Matter. Elsevier. 2001, 308-310, pp. 69-72. ISSN 0921-4526. eISSN 1873-2135. Available under: doi: 10.1016/S0921-4526(01)00655-X
BibTex
@article{Goennenwein2001Defec-53546,
  year={2001},
  doi={10.1016/S0921-4526(01)00655-X},
  title={Defect-related noise in AlN and AlGaN alloys},
  volume={308-310},
  issn={0921-4526},
  journal={Physica B: Condensed Matter},
  pages={69--72},
  author={Goennenwein, Sebastian T. B. and Zeisel, Roland and Baldovino, Silvia and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin}
}
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