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Quantum confinement in EuO heterostructures

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2016

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Prinz, Günther M.
Gerber, Timm
Lorke, Axel

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https://doi.org/10.1063/1.4966223
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Applied Physics Letters. American Institute of Physics. 2016, 109(20), 202401. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4966223

Zusammenfassung

Quantum wells are created from ultrathin single-crystalline EuO layers to study the evolution of the optical band gap down to the single nanometer regime. We find that the EuO band gap is indirect—independent of quantum well thickness—and increases from 1.19 eV for bulk-like (d = 32 nm) to ≈1.4 eV in the ultrathin films (d = 1.1 nm). The observed band-gap widening is a clear sign of a quantum confinement effect, which can be used to control and modify the band gap in EuO-based all-oxide heterostructures. We thank R. Pentcheva for inspiring discussions and O. Petracic and the Jülich Centre for Neutronscience for providing measurement time at the SQUID magnetometer. M.M. acknowledges financial support by HGF under Contract No. VH-NG-811.

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ISO 690PRINZ, Günther M., Timm GERBER, Axel LORKE, Martina MÜLLER, 2016. Quantum confinement in EuO heterostructures. In: Applied Physics Letters. American Institute of Physics. 2016, 109(20), 202401. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.4966223
BibTex
@article{Prinz2016-11-14Quant-49485,
  year={2016},
  doi={10.1063/1.4966223},
  title={Quantum confinement in EuO heterostructures},
  number={20},
  volume={109},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Prinz, Günther M. and Gerber, Timm and Lorke, Axel and Müller, Martina},
  note={Article Number: 202401}
}
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