Publikation: Electron tunneling through barriers of adjustable width : Role of the image potential and the wetting behavior of Cs by He
Dateien
Datum
Autor:innen
Herausgeber:innen
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
URI (zitierfähiger Link)
DOI (zitierfähiger Link)
Internationale Patentnummer
Link zur Lizenz
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Sammlungen
Core Facility der Universität Konstanz
Titel in einer weiteren Sprache
Publikationstyp
Publikationsstatus
Erschienen in
Zusammenfassung
Photocurrents from cesium, flowing through gaseous 3He or 4He and also through thin liquid helium films, are investigated as a function of the chemical potential of helium at T=1.33 K. At low pressures, the two isotopes behave similarly as the photocurrent is governed by scattering by the gas. At higher pressures, a film of 3He grows on the Cs and forms a tunnel barrier; but for 4He, the film is too thin to form a tunnel barrier below liquid-vapor coexistence. This is because 4He does not wet Cs at this temperature and the finite thickness needed to form a tunnel barrier is larger than the thickness of the thin-film state. 3He enables a continuously variable tunnel barrier thickness to be studied. We show that the image potential is important and confirm that an electron in liquid 3He has a potential energy of 1.0 eV. We find that the thickness d of a hlium film is given by for films thicker than approximately three monolayers.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
Schlagwörter
Konferenz
Rezension
Zitieren
ISO 690
ZECH, Martin, Hubertus BROMBERGER, Jürgen KLIER, Paul LEIDERER, Adrian F. G. WYATT, 2008. Electron tunneling through barriers of adjustable width : Role of the image potential and the wetting behavior of Cs by He. In: Physical Review B. 2008, 78, 115113. Available under: doi: 10.1103/PhysRevB.78.115113BibTex
@article{Zech2008Elect-9336, year={2008}, doi={10.1103/PhysRevB.78.115113}, title={Electron tunneling through barriers of adjustable width : Role of the image potential and the wetting behavior of Cs by He}, volume={78}, journal={Physical Review B}, author={Zech, Martin and Bromberger, Hubertus and Klier, Jürgen and Leiderer, Paul and Wyatt, Adrian F. G.}, note={Article Number: 115113} }
RDF
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/9336"> <dc:contributor>Zech, Martin</dc:contributor> <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights> <dc:contributor>Klier, Jürgen</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> <dc:creator>Klier, Jürgen</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9336"/> <dcterms:title>Electron tunneling through barriers of adjustable width : Role of the image potential and the wetting behavior of Cs by He</dcterms:title> <dc:contributor>Bromberger, Hubertus</dc:contributor> <dcterms:issued>2008</dcterms:issued> <dc:creator>Wyatt, Adrian F. G.</dc:creator> <dc:contributor>Wyatt, Adrian F. G.</dc:contributor> <dcterms:abstract xml:lang="eng">Photocurrents from cesium, flowing through gaseous 3He or 4He and also through thin liquid helium films, are investigated as a function of the chemical potential of helium at T=1.33 K. At low pressures, the two isotopes behave similarly as the photocurrent is governed by scattering by the gas. At higher pressures, a film of 3He grows on the Cs and forms a tunnel barrier; but for 4He, the film is too thin to form a tunnel barrier below liquid-vapor coexistence. This is because 4He does not wet Cs at this temperature and the finite thickness needed to form a tunnel barrier is larger than the thickness of the thin-film state. 3He enables a continuously variable tunnel barrier thickness to be studied. We show that the image potential is important and confirm that an electron in liquid 3He has a potential energy of 1.0 eV. We find that the thickness d of a hlium film is given by for films thicker than approximately three monolayers.</dcterms:abstract> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:35Z</dc:date> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Zech, Martin</dc:creator> <dc:language>eng</dc:language> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:35Z</dcterms:available> <dcterms:bibliographicCitation>First publ. in: Physical Review B 78 (2008), 115113</dcterms:bibliographicCitation> <dc:creator>Bromberger, Hubertus</dc:creator> <dc:contributor>Leiderer, Paul</dc:contributor> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9336/1/Electron_tunneling_through_barriers_of_adjustable_width.pdf"/> <dc:creator>Leiderer, Paul</dc:creator> <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/> <foaf:homepage rdf:resource="http://localhost:8080/"/> <dc:format>application/pdf</dc:format> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9336/1/Electron_tunneling_through_barriers_of_adjustable_width.pdf"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/> </rdf:Description> </rdf:RDF>