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Full counting statistics of crossed Andreev reflection

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2008

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Morten, Jan Petter
Huertas-Hernando, Daniel
Brataas, Arne

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Physical Review B. American Physical Society (APS). 2008, 78(22), 224515. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.78.224515

Zusammenfassung

We calculate the full transport counting statistics in a three-terminal tunnel device with one superconducting source and two normal-metal or ferromagnet drains. We obtain the transport probability distribution from direct Andreev reflection, crossed Andreev reflection, and electron transfer which reveals how these processes’ statistics are determined by the device conductances. The cross-correlation noise is a result of competing contributions from crossed Andreev reflection and electron transfer, as well as antibunching due to the Pauli exclusion principle. For spin-active tunnel barriers that spin polarize the electron flow, crossed Andreev reflection and electron transfer statistics exhibit different dependencies on the magnetization configuration and can be controlled by relative magnetization directions and voltage bias.

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530 Physik

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ISO 690MORTEN, Jan Petter, Daniel HUERTAS-HERNANDO, Wolfgang BELZIG, Arne BRATAAS, 2008. Full counting statistics of crossed Andreev reflection. In: Physical Review B. American Physical Society (APS). 2008, 78(22), 224515. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.78.224515
BibTex
@article{Morten2008count-58633,
  year={2008},
  doi={10.1103/PhysRevB.78.224515},
  title={Full counting statistics of crossed Andreev reflection},
  number={22},
  volume={78},
  issn={2469-9950},
  journal={Physical Review B},
  author={Morten, Jan Petter and Huertas-Hernando, Daniel and Belzig, Wolfgang and Brataas, Arne},
  note={Article Number: 224515}
}
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    <dcterms:abstract xml:lang="eng">We calculate the full transport counting statistics in a three-terminal tunnel device with one superconducting source and two normal-metal or ferromagnet drains. We obtain the transport probability distribution from direct Andreev reflection, crossed Andreev reflection, and electron transfer which reveals how these processes’ statistics are determined by the device conductances. The cross-correlation noise is a result of competing contributions from crossed Andreev reflection and electron transfer, as well as antibunching due to the Pauli exclusion principle. For spin-active tunnel barriers that spin polarize the electron flow, crossed Andreev reflection and electron transfer statistics exhibit different dependencies on the magnetization configuration and can be controlled by relative magnetization directions and voltage bias.</dcterms:abstract>
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