Publikation: Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs
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1993
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Applied Physics Letters. 1993, 63(21), pp. 2899-2901. Available under: doi: 10.1063/1.110291
Zusammenfassung
We compare the dynamics of electric field, transport, and coherent phonons in as-grown and annealed low-temperature (LT) GaAs by an electro-optic technique on a subpicosecond time scale. The buildup and decay of space-charge fields associated with the photo-Dember effect are investigated. The recombination dynamics of trapped carriers is monitored via the ps decay of the electro-optic signal. Differences in annealed and as-grown LT GaAs are related to the different microscopic form of excess arsenic and point defect density. In the coherent phonon signal a large red shift of the LO phonon and an additional local vibration below the LO phonon provides information on structural defects in as-grown LT GaAs. Applied Physics Letters is copyrighted by The American Institute of Physics.
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DEKORSY, Thomas, Heinrich KURZ, X. Q. ZHOU, Klaus PLOOG, 1993. Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs. In: Applied Physics Letters. 1993, 63(21), pp. 2899-2901. Available under: doi: 10.1063/1.110291BibTex
@article{Dekorsy1993Inves-9108,
year={1993},
doi={10.1063/1.110291},
title={Investigation of field, carrier, and coherent phonon dynamics in low-temperature grown GaAs},
number={21},
volume={63},
journal={Applied Physics Letters},
pages={2899--2901},
author={Dekorsy, Thomas and Kurz, Heinrich and Zhou, X. Q. and Ploog, Klaus}
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