Publikation: Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon
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2020
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Journal of Non-Crystalline Solids: X. Elsevier. 2020, 5, 100044. ISSN 2590-1591. eISSN 2590-1591. Available under: doi: 10.1016/j.nocx.2020.100044
Zusammenfassung
In this study, a variation of the substrate temperature during plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon is reported, which revealed a local minimum of the optical bandgap. It is shown, that the silicon monohydride bond density is more appropriate to describe this dependency than the commonly discussed layer properties hydrogen concentration and structural disorder. Furthermore, a high silicon monohydride bond density regime is suggested, in which the optical bandgap is independent of the bond density. This hypohesis explains previously published constant optical bandgaps under variation of the hydrogen concentration and structural disorder.
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Fachgebiet (DDC)
530 Physik
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Hydrogenated amorphous silicon, Optical bandgap, Monohydride bond density, Fourier-transform infrared spectroscopy, Spectroscopic ellipsometry
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STEFFENS, Jonathan, Johannes RINDER, Giso HAHN, Barbara TERHEIDEN, 2020. Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon. In: Journal of Non-Crystalline Solids: X. Elsevier. 2020, 5, 100044. ISSN 2590-1591. eISSN 2590-1591. Available under: doi: 10.1016/j.nocx.2020.100044BibTex
@article{Steffens2020-03Corre-48265,
year={2020},
doi={10.1016/j.nocx.2020.100044},
title={Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon},
volume={5},
issn={2590-1591},
journal={Journal of Non-Crystalline Solids: X},
author={Steffens, Jonathan and Rinder, Johannes and Hahn, Giso and Terheiden, Barbara},
note={Article Number: 100044}
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