Thermal stability of PECVD a-Si1-xCx layers for crystalline silicon solar cell passivation

Kurzanzeige
dc.contributor.authorEbert, Stefanie
dc.contributor.authorRaabe, Bernd
dc.contributor.authorStewart, Michael P.deu
dc.contributor.authorMungekar, Hemantdeu
dc.contributor.authorBorden, Peterdeu
dc.contributor.authorTerheiden, Barbara
dc.contributor.authorHahn, Giso
dc.date.accessioned2011-03-22T17:51:51Zdeu
dc.date.available2011-03-22T17:51:51Zdeu
dc.date.issued2009deu
dc.description.abstractWe investigate the thermal stability of the surface passivation of PECVD a-Si1-xCx layers on symmetrical lifetime samples. To study the influence of thermal treatment on the passivation quality, lifetime measurements on symmetrical samples using the quasi transient technique and the quasi steady state technique are performed. The samples are exposed to temperatures up to 600°C. The annealing steps of ten minutes are carried out in H-plasma and N2 ambient and annealing is done cumulatively. After each temperature step effective lifetime and FTIR measurements are performed. Maximum effective lifetimes of 1.2 ms and 1.7 ms are obtained after annealing at 550°C in hydrogen atmosphere generated by a remote H-plasma and N2 ambient, respectively. In the FTIR spectra a reduction of the SiH peak intensity at 2060 cm-1 is observed. The intensity of the other SiH peaks does not change significantly during annealing.eng
dc.description.versionpublished
dc.identifier.citationFirst publ. in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg. München : WIP - Wirtschaft und Infrastruktur, 2009, pp. 1591-1595deu
dc.identifier.doi10.4229/24thEUPVSEC2009-2CV.2.49
dc.identifier.ppn510417159
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/908
dc.language.isoengdeu
dc.legacy.dateIssued2010deu
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subjectSilicon carbidedeu
dc.subjectPassivationdeu
dc.subjectThermal annealingdeu
dc.subject.ddc530deu
dc.titleThermal stability of PECVD a-Si<sub>1-x</sub>C<sub>x</sub> layers for crystalline silicon solar cell passivationeng
dc.typeINPROCEEDINGSdeu
dspace.entity.typePublication
kops.citation.bibtex
@inproceedings{Ebert2009Therm-908,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2CV.2.49},
  title={Thermal stability of PECVD a-Si<sub>1-x</sub>C<sub>x</sub> layers for crystalline silicon solar cell passivation},
  isbn={3-936338-25-6},
  publisher={WIP - Wirtschaft und Infrastruktur},
  address={München},
  booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference},
  pages={1591--1595},
  author={Ebert, Stefanie and Raabe, Bernd and Stewart, Michael P. and Mungekar, Hemant and Borden, Peter and Terheiden, Barbara and Hahn, Giso}
}
kops.citation.iso690EBERT, Stefanie, Bernd RAABE, Michael P. STEWART, Hemant MUNGEKAR, Peter BORDEN, Barbara TERHEIDEN, Giso HAHN, 2009. Thermal stability of PECVD a-Si1-xCx layers for crystalline silicon solar cell passivation. 24th European Photovoltaic Solar Energy. Hamburg, 21. Sept. 2009 - 25. Sept. 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. München: WIP - Wirtschaft und Infrastruktur, 2009, pp. 1591-1595. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2CV.2.49deu
kops.citation.iso690EBERT, Stefanie, Bernd RAABE, Michael P. STEWART, Hemant MUNGEKAR, Peter BORDEN, Barbara TERHEIDEN, Giso HAHN, 2009. Thermal stability of PECVD a-Si1-xCx layers for crystalline silicon solar cell passivation. 24th European Photovoltaic Solar Energy. Hamburg, Sep 21, 2009 - Sep 25, 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. München: WIP - Wirtschaft und Infrastruktur, 2009, pp. 1591-1595. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2CV.2.49eng
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kops.conferencefield24th European Photovoltaic Solar Energy, 21. Sept. 2009 - 25. Sept. 2009, Hamburgdeu
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