Publikation:

3He impurity effects on the growth kinetics of 4He crystals

Lade...
Vorschaubild

Dateien

185_czechjphys_1996.pdf
185_czechjphys_1996.pdfGröße: 150.54 KBDownloads: 517

Datum

1996

Autor:innen

Suzuki, M.
Thiel, M.

Herausgeber:innen

Kontakt

ISSN der Zeitschrift

Electronic ISSN

ISBN

Bibliografische Daten

Verlag

Schriftenreihe

Auflagebezeichnung

DOI (zitierfähiger Link)
ArXiv-ID

Internationale Patentnummer

Angaben zur Forschungsförderung

Projekt

Open Access-Veröffentlichung
Open Access Green
Core Facility der Universität Konstanz

Gesperrt bis

Titel in einer weiteren Sprache

Publikationstyp
Zeitschriftenartikel
Publikationsstatus
Published

Erschienen in

Czechoslovak Journal of Physics. 1996, 46(1, Supplement 1), pp. 459-460. ISSN 0011-4626. eISSN 1572-9486. Available under: doi: 10.1007/BF02569645

Zusammenfassung

We report on the growth kinetics of 4He crystals with a small amount of 3He impurities around 0.8K. The growth resistance was measured using the response of the charged liquid-solid interface with respect to an externally applied voltage. In 5ppm and 10ppm 3He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure 4He and does not have a strong 3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as for pure 4He. We discuss several possible explanations of the present experiment.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Konferenz

Rezension
undefined / . - undefined, undefined

Forschungsvorhaben

Organisationseinheiten

Zeitschriftenheft

Zugehörige Datensätze in KOPS

Zitieren

ISO 690SUZUKI, M., M. THIEL, Paul LEIDERER, 1996. 3He impurity effects on the growth kinetics of 4He crystals. In: Czechoslovak Journal of Physics. 1996, 46(1, Supplement 1), pp. 459-460. ISSN 0011-4626. eISSN 1572-9486. Available under: doi: 10.1007/BF02569645
BibTex
@article{Suzuki1996impur-8937,
  year={1996},
  doi={10.1007/BF02569645},
  title={3He impurity effects on the growth kinetics of 4He crystals},
  number={1, Supplement 1},
  volume={46},
  issn={0011-4626},
  journal={Czechoslovak Journal of Physics},
  pages={459--460},
  author={Suzuki, M. and Thiel, M. and Leiderer, Paul}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/8937">
    <dc:contributor>Leiderer, Paul</dc:contributor>
    <dc:language>eng</dc:language>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Suzuki, M.</dc:contributor>
    <dc:creator>Leiderer, Paul</dc:creator>
    <dc:contributor>Thiel, M.</dc:contributor>
    <dcterms:title>3He impurity effects on the growth kinetics of 4He crystals</dcterms:title>
    <dcterms:bibliographicCitation>First publ. in: Czechoslovak Journal of Physics 46 (1996), Supplement S1, pp. 459-460</dcterms:bibliographicCitation>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/2.0/"/>
    <dcterms:issued>1996</dcterms:issued>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/8937"/>
    <dcterms:abstract xml:lang="eng">We report on the growth kinetics of 4He crystals with a small amount of 3He impurities around 0.8K. The growth resistance was measured using the response of the charged liquid-solid interface with respect to an externally applied voltage. In 5ppm and 10ppm 3He mixtures, it is found that (1) the relaxation process can be expressed as an exponential behavior, (2) the growth resistance becomes larger compared to pure 4He and does not have a strong 3He concentration dependence, and (3) the temperature dependence of the growth resistance is much the same as for pure 4He. We discuss several possible explanations of the present experiment.</dcterms:abstract>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:format>application/pdf</dc:format>
    <dc:rights>Attribution-NonCommercial-NoDerivs 2.0 Generic</dc:rights>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:12Z</dcterms:available>
    <dc:creator>Thiel, M.</dc:creator>
    <dc:creator>Suzuki, M.</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:52:12Z</dc:date>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8937/1/185_czechjphys_1996.pdf"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/8937/1/185_czechjphys_1996.pdf"/>
  </rdf:Description>
</rdf:RDF>

Interner Vermerk

xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter

Kontakt
URL der Originalveröffentl.

Prüfdatum der URL

Prüfungsdatum der Dissertation

Finanzierungsart

Kommentar zur Publikation

Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Nein
Begutachtet
Diese Publikation teilen