Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

dc.contributor.authorBuonassisi, Tonio
dc.contributor.authorIstratov, Andrei A.
dc.contributor.authorPickett, Matthew D.
dc.contributor.authorMarcus, Matthew A.
dc.contributor.authorHahn, Giso
dc.contributor.authorRiepe, Stephan
dc.contributor.authorIsenberg, Jörg
dc.contributor.authorWarta, Wilhelm
dc.contributor.authorWilleke, Gerd
dc.contributor.authorCiszek, Ted F.
dc.contributor.authorWeber, Eicke R.
dc.date.accessioned2015-07-10T07:34:54Z
dc.date.available2015-07-10T07:34:54Z
dc.date.issued2005eng
dc.description.versionpublished
dc.identifier.doi10.1063/1.1997274eng
dc.identifier.ppn50648680X
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/31408
dc.language.isoengeng
dc.rightsterms-of-use
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dc.subject.ddc530eng
dc.titleQuantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced currenteng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Buonassisi2005Quant-31408,
  year={2005},
  doi={10.1063/1.1997274},
  title={Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current},
  number={4},
  volume={87},
  issn={0003-6951},
  journal={Applied Physics Letters},
  author={Buonassisi, Tonio and Istratov, Andrei A. and Pickett, Matthew D. and Marcus, Matthew A. and Hahn, Giso and Riepe, Stephan and Isenberg, Jörg and Warta, Wilhelm and Willeke, Gerd and Ciszek, Ted F. and Weber, Eicke R.},
  note={Article Number: 044101}
}
kops.citation.iso690BUONASSISI, Tonio, Andrei A. ISTRATOV, Matthew D. PICKETT, Matthew A. MARCUS, Giso HAHN, Stephan RIEPE, Jörg ISENBERG, Wilhelm WARTA, Gerd WILLEKE, Ted F. CISZEK, Eicke R. WEBER, 2005. Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current. In: Applied Physics Letters. 2005, 87(4), 044101. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1997274deu
kops.citation.iso690BUONASSISI, Tonio, Andrei A. ISTRATOV, Matthew D. PICKETT, Matthew A. MARCUS, Giso HAHN, Stephan RIEPE, Jörg ISENBERG, Wilhelm WARTA, Gerd WILLEKE, Ted F. CISZEK, Eicke R. WEBER, 2005. Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current. In: Applied Physics Letters. 2005, 87(4), 044101. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1997274eng
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kops.sourcefieldApplied Physics Letters. 2005, <b>87</b>(4), 044101. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1997274deu
kops.sourcefield.plainApplied Physics Letters. 2005, 87(4), 044101. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1997274deu
kops.sourcefield.plainApplied Physics Letters. 2005, 87(4), 044101. ISSN 0003-6951. eISSN 1077-3118. Available under: doi: 10.1063/1.1997274eng
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source.bibliographicInfo.articleNumber044101eng
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source.periodicalTitleApplied Physics Letterseng
temp.internal.duplicates<p>Keine Dubletten gefunden. Letzte Überprüfung: 22.04.2015 13:41:18</p>deu

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