Publikation: A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times
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Texturization of monocrystalline silicon for solar cells is still an issue due to the properties of the isopropyl alcohol (IPA) in the standard Potassium Hydroxide KOH (or Sodium Hydroxide NaOH)-IPA etching solution. The low boiling point of IPA (82.4oC) is limiting etch temperature and by this processing speed. Furthermore, IPA has other disadvantages like waste recycling problems. A better alternative for IPA, not only regarding processing time, is a High Boiling Alcohol (HBA). In this paper we show, that our newly found KOH-HBA texture also gives lower reflection results than our KOH-IPA texture. Finally, we produced solar cells with both textures and current-voltage measurements are compared.
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XIMELLO QUIEBRAS, Jose Nestor, Helge HAVERKAMP, Giso HAHN, 2009. A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times. 24th European Photovoltaic Solar Energy Conference. Hamburg, 21. Sept. 2009 - 25. Sept. 2009. In: Proceedings of the 24th European PV SEC, Hamburg, 21 - 25 September 2009. München: WIP, 2009, pp. 1958-1960. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2CV.5.70BibTex
@inproceedings{XimelloQuiebras2009KOHet-934, year={2009}, doi={10.4229/24thEUPVSEC2009-2CV.5.70}, title={A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times}, isbn={3-936338-25-6}, publisher={WIP}, address={München}, booktitle={Proceedings of the 24th European PV SEC, Hamburg, 21 - 25 September 2009}, pages={1958--1960}, author={Ximello Quiebras, Jose Nestor and Haverkamp, Helge and Hahn, Giso} }
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